DOI: 10.1063/1.98530. Molecular beam epitaxial growth of CoSi2 on porous Si

Molecular beam epitaxial growth of CoSi2 on porous Si

10.1063/1.98530

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

CoSi2 epitaxial layers with different thicknesses have been grown onto porous-Si substrates by molecular beam epitaxy. Good crystallinity is obtained for CoSi2 films thicker than 50 nm. The use of a thin buffer layer is found to be crucial in order to achieve abrupt interface and good crystallinity. Planar view transmission electron microscope images obtained from 30-nm-thick CoSi2 buffer-Si/porous-Si samples indicate that a large area of the epitaxial film is dislocation free, in contrast with a uniform distribution of misfit dislocations across relaxed CoSi2/single-crystal Si samples of the same thickness. This study suggests a possible pseudomorphic growth by using porous Si as a substrate.

Bibliography

Kao, Y. C., Wang, K. L., Wu, B. J., Lin, T. L., Nieh, C. W., Jamieson, D., & Bai, G. (1987). Molecular beam epitaxial growth of CoSi2 on porous Si. Applied Physics Letters, 51(22), 1809â1811.

Authors 7

Y. C. Kao (first)
K. L. Wang (additional)
B. J. Wu (additional)
T. L. Lin (additional)
C. W. Nieh (additional)
D. Jamieson (additional)
G. Bai (additional)

References 8 Referenced 23

10.1016/0040-6090(82)90093-1 / Thin Solid Films (1982)
{'key': '2024020221523423200_r2', 'first-page': '596', 'volume': '3', 'year': '1985', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1985)
10.1063/1.98882 / Appl. Phys. Lett. (1987)
10.1063/1.97204 / Appl. Phys. Lett. (1986)
{'key': '2024020221523423200_r5'}
{'key': '2024020221523423200_r6', 'first-page': '1035', 'volume': '3', 'year': '1985', 'journal-title': 'J. Vac. Sci. Technol. A'} / J. Vac. Sci. Technol. A (1985)
10.1063/1.96789 / Appl. Phys. Lett. (1986)
10.1143/JJAP.21.534 / Jpn. J. Appl. Phys. (1982)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 5:09 p.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 8:21 a.m.)
Issued	37 years, 9 months ago (Nov. 30, 1987)
Published	37 years, 9 months ago (Nov. 30, 1987)
Published Print	37 years, 9 months ago (Nov. 30, 1987)

Funders 0

None

BibTeX

@article{Kao_1987, title={Molecular beam epitaxial growth of CoSi2 on porous Si}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98530}, DOI={10.1063/1.98530}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kao, Y. C. and Wang, K. L. and Wu, B. J. and Lin, T. L. and Nieh, C. W. and Jamieson, D. and Bai, G.}, year={1987}, month=nov, pages={1809–1811} }

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