DOI: 10.1063/1.98439. Role of Hg in junction formation in ion-implanted HgCdTe

Role of Hg in junction formation in ion-implanted HgCdTe

10.1063/1.98439

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The present work clarifies the role of Hg diffusion in forming ion-implanted junctions in HgCdTe. Two experiments indicate that displaced Hg acts as a limited diffusion source. The first experiment contrasts n/p junction electrical profiles in two HgCdTe wafers, one p doped primarily by cation vacancies and the other primarily by the addition of As in the liquid phase epitaxy melt. The second experiment compares the carrier concentration near the junction with the residual net background doping of the sample. The results indicate that Hg released from the implant region operates as a limited diffusion source in the post-implant anneal process. Adjusting these material and process parameters allows n-on-p junctions to be formed with a controllable electrical profile.

Bibliography

Bubulac, L. O., & Tennant, W. E. (1987). Role of Hg in junction formation in ion-implanted HgCdTe. Applied Physics Letters, 51(5), 355â357.

Authors 2

L. O. Bubulac (first)
W. E. Tennant (additional)

References 16 Referenced 47

{'key': '2024020221304829600_r1'}
{'key': '2024020221304829600_r2', 'first-page': '120', 'volume': '443', 'year': '1983', 'journal-title': 'Proc. Soc. Photo-Opt. Instrum. Eng.'} / Proc. Soc. Photo-Opt. Instrum. Eng. (1983)
{'key': '2024020221304829600_r3'}
{'key': '2024020221304829600_r4', 'first-page': '495', 'volume': '19', 'year': '1980', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1980)
{'key': '2024020221304829600_r5', 'first-page': '521', 'volume': '211', 'year': '1982', 'journal-title': 'J. Vac. Sci. Technol.'} / J. Vac. Sci. Technol. (1982)
{'key': '2024020221304829600_r6', 'first-page': '1946', 'volume': '13', 'year': '1983', 'journal-title': 'J. Vac. Sci. Technol.'} / J. Vac. Sci. Technol. (1983)
10.1016/0022-0248(82)90335-9 / J. Cryst. Growth (1982)
10.1080/00337578008209261 / Radiat. Eff. (1980)
10.1063/1.330641 / J. Appl. Phys. (1982)
{'key': '2024020221304829600_r10', 'first-page': '209', 'volume': '567', 'year': '1983', 'journal-title': 'Nucl. Instrum. Methods'} / Nucl. Instrum. Methods (1983)
10.1063/1.332469 / J. Appl. Phys. (1983)
{'key': '2024020221304829600_r12', 'first-page': '560', 'volume': '17', 'year': '1983', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1983)
10.1063/1.93665 / Appl. Phys. Lett. (1982)
10.1016/0022-0248(85)90194-0 / J. Cryst. Growth (1985)
10.1063/1.95786 / Appl. Phys. Lett. (1985)
{'key': '2024020221304829600_r16', 'first-page': '2625', 'volume': '128', 'year': '1982', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1982)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 4:55 p.m.)
Indexed	2 months, 3 weeks ago (June 7, 2025, 4:26 p.m.)
Issued	38 years ago (Aug. 3, 1987)
Published	38 years ago (Aug. 3, 1987)
Published Print	38 years ago (Aug. 3, 1987)

Funders 0

None

BibTeX

@article{Bubulac_1987, title={Role of Hg in junction formation in ion-implanted HgCdTe}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98439}, DOI={10.1063/1.98439}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bubulac, L. O. and Tennant, W. E.}, year={1987}, month=aug, pages={355–357} }

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