DOI: 10.1063/1.98413. Electron trap center generation due to hole trapping in SiO2 under Fowler

Electron trap center generation due to hole trapping in SiO2 under Fowler–Nordheim tunneling stress

10.1063/1.98413

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The relation between generation of neutral electron trap centers and hole trapping in thermally grown SiO2 under Fowler–Nordheim tunneling stress has been investigated. The experimental results show that the density of neutral electron trap centers is proportional to the density of trapped holes under Fowler–Nordheim tunneling stress with various electric fields and the total number of electrons injected into the oxide. The generation mechanism is explained by a model based on strained bonds.

Bibliography

Uchida, H., & Ajioka, T. (1987). Electron trap center generation due to hole trapping in SiO2 under FowlerâNordheim tunneling stress. Applied Physics Letters, 51(6), 433â435.

Authors 2

Hidetsugu Uchida (first)
Tsuneo Ajioka (additional)

References 17 Referenced 50

{'key': '2024020221332575800_r1', 'first-page': '83', 'volume': 'ED-28', 'year': '1981', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1981)
{'key': '2024020221332575800_r2'}
{'key': '2024020221332575800_r3'}
10.1063/1.96173 / Appl. Phys. Lett. (1985)
10.1063/1.96446 / Appl. Phys. Lett. (1986)
10.1063/1.334767 / J. Appl. Phys. (1985)
10.1063/1.328565 / J. Appl. Phys. (1981)
{'key': '2024020221332575800_r8', 'first-page': '57', 'volume': '14', 'year': '1972', 'journal-title': 'Thin Solid Films'} / Thin Solid Films (1972)
10.1063/1.332323 / J. Appl. Phys. (1983)
10.1063/1.329126 / J. Appl. Phys. (1981)
10.1063/1.94709 / Appl. Phys. Lett. (1984)
10.1063/1.1709189 / J. Appl. Phys. (1967)
10.1063/1.336605 / J. Appl. Phys. (1986)
10.1063/1.335219 / J. Appl. Phys. (1985)
10.1063/1.93115 / Appl. Phys. Lett. (1982)
{'key': '2024020221332575800_r16', 'first-page': '1640', 'volume': 'NS-27', 'year': '1980', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1980)
10.1063/1.332937 / J. Appl. Phys. (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 4:57 p.m.)
Indexed	4 months, 4 weeks ago (April 3, 2025, 7:43 a.m.)
Issued	38 years ago (Aug. 10, 1987)
Published	38 years ago (Aug. 10, 1987)
Published Print	38 years ago (Aug. 10, 1987)

Funders 0

None

BibTeX

@article{Uchida_1987, title={Electron trap center generation due to hole trapping in SiO2 under Fowler–Nordheim tunneling stress}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98413}, DOI={10.1063/1.98413}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Uchida, Hidetsugu and Ajioka, Tsuneo}, year={1987}, month=aug, pages={433–435} }

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