DOI: 10.1063/1.98329. Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

10.1063/1.98329

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature electron mobility of ∼5700 cm2/V s for NSi∼4×1015 and a strong exciton photoluminescence emission at 4 K. This breakthrough in MBE growth of III-V compounds allows for fabrication of (110) GaAs devices which will take advantage of the unique properties of this orientation.

Bibliography

Allen, L. T. P., Weber, E. R., Washburn, J., & Pao, Y. C. (1987). Device quality growth and characterization of (110)âGaAs grown by molecular beam epitaxy. Applied Physics Letters, 51(9), 670â672.

Authors 4

L. T. P. Allen (first)
E. R. Weber (additional)
J. Washburn (additional)
Y. C. Pao (additional)

References 15 Referenced 49

10.1016/0079-6786(75)90005-9 / Prog. Solid State Chem. (1975)
10.1016/0038-1101(78)90151-X / Solid State Electron. (1978)
10.1063/1.95957 / Appl. Phys. Lett. (1985)
10.1063/1.322937 / J. Appl. Phys. (1976)
{'key': '2024020221364393100_r4'}
10.1063/1.92987 / Appl. Phys. Lett. (1982)
10.1016/0039-6028(80)90220-4 / Surf. Sci. (1980)
10.1063/1.93345 / Appl. Phys. Lett. (1982)
10.1116/1.582567 / J. Vac. Sci. Technol. B (1983)
{'key': '2024020221364393100_r9'}
{'key': '2024020221364393100_r10'}
10.1063/1.97410 / Appl. Phys. Lett. (1986)
10.1088/0022-3735/14/4/018 / J. Phys. E (1981)
10.1063/1.334843 / J. Appl. Phys. (1985)
10.1103/PhysRevLett.56.520 / Phys. Rev. Lett. (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 4:59 p.m.)
Indexed	1 year ago (Aug. 11, 2024, 12:30 p.m.)
Issued	38 years ago (Aug. 31, 1987)
Published	38 years ago (Aug. 31, 1987)
Published Print	38 years ago (Aug. 31, 1987)

Funders 0

None

BibTeX

@article{Allen_1987, title={Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98329}, DOI={10.1063/1.98329}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Allen, L. T. P. and Weber, E. R. and Washburn, J. and Pao, Y. C.}, year={1987}, month=aug, pages={670–672} }

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