DOI: 10.1063/1.98282. High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films

High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films

10.1063/1.98282

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Depletion-mode n-channel metal-oxide-semiconductor field-effect transistors were fabricated on n-type β-SiC (111) thin films epitaxially grown by chemical vapor deposition on the Si (0001) face of 6H α-SiC single crystals. The gate oxide was thermally grown on the SiC; the source and drain were doped n+ by N+ ion implantation at 823 K. Stable saturation and low subthreshold current were achieved at drain voltages exceeding 25 V. Transconductances as high as 11.9 mS/mm were achieved. Stable transistor action was observed at temperatures as high as 923 K, the highest temperature reported to date for a transistor in any material.

Bibliography

Palmour, J. W., Kong, H. S., & Davis, R. F. (1987). High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films. Applied Physics Letters, 51(24), 2028â2030.

Authors 3

J. W. Palmour (first)
H. S. Kong (additional)
R. F. Davis (additional)

References 15 Referenced 102

{'key': '2024020221562001300_r1'}
10.1063/1.93970 / Appl. Phys. Lett. (1983)
10.1149/1.2113921 / J. Electrochem. Soc. (1985)
10.1149/1.2108406 / J. Electrochem. Soc. (1986)
{'key': '2024020221562001300_r5'}
10.1063/1.95502 / Appl. Phys. Lett. (1985)
{'key': '2024020221562001300_r7'}
10.1063/1.98416 / Appl. Phys. Lett. (1987)
10.1063/1.97159 / Appl. Phys. Lett. (1986)
10.1143/JJAP.23.L862 / Jpn. J. Appl. Phys. (1984)
{'key': '2024020221562001300_r11', 'first-page': '404', 'volume': 'EDL-7', 'year': '1986', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1986)
{'key': '2024020221562001300_r12'}
{'key': '2024020221562001300_r13'}
10.1557/JMR.1986.0811 / J. Mater. Res. (1986)
10.1063/1.97479 / Appl. Phys. Lett. (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 5:11 p.m.)
Indexed	5 months ago (March 30, 2025, 10:07 a.m.)
Issued	37 years, 8 months ago (Dec. 14, 1987)
Published	37 years, 8 months ago (Dec. 14, 1987)
Published Print	37 years, 8 months ago (Dec. 14, 1987)

Funders 0

None

BibTeX

@article{Palmour_1987, title={High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films}, volume={51}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98282}, DOI={10.1063/1.98282}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Palmour, J. W. and Kong, H. S. and Davis, R. F.}, year={1987}, month=dec, pages={2028–2030} }

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