DOI: 10.1063/1.98196. Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates

Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates

10.1063/1.98196

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

GaAs/AlGaAs superlattice heterostructures with layer thicknesses ≲100 Å were grown by molecular beam epitaxy on nonplanar GaAs substrates. The resulting superlattices exhibit different periods, depending on the crystal plane on which they grow. Period variation of more than 50%, from 180 to 80 Å, was obtained for adjacent superlattice sections. The transition between regions of different periodicity was mostly smooth and occurred within lateral dimensions ≲100 Å. Our results suggest that molecular beam epitaxy of superlattice heterostructures on patterned substrates provides a method for obtaining controllable lateral variations in physical properties which depend on the superlattice period. In particular, by growing quantum well heterostructures on nonplanar substrates, it might be possible to utilize the strong dependence of the carrier confinement energy on the well thickness in order to achieve lateral carrier confinement.

Bibliography

Kapon, E., Tamargo, M. C., & Hwang, D. M. (1987). Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates. Applied Physics Letters, 50(6), 347â349.

Authors 3

E. Kapon (first)
M. C. Tamargo (additional)
D. M. Hwang (additional)

References 8 Referenced 196

10.1063/1.89373 / Appl. Phys. Lett. (1977)
10.1063/1.89231 / Appl. Phys. Lett. (1977)
10.1063/1.96012 / Appl. Phys. Lett. (1985)
10.1063/1.94941 / Appl. Phys. Lett. (1984)
10.1103/PhysRevLett.33.827 / Phys. Rev. Lett. (1974)
10.1016/0038-1098(81)90401-4 / Solid State Commun. (1981)
{'key': '2024020221032497500_r7', 'first-page': '397', 'volume': '112', 'year': '1983', 'journal-title': 'T. Electron. Mater.'} / T. Electron. Mater. (1983)
10.1063/1.96108 / Appl. Phys. Lett. (1985)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 4:30 p.m.)
Indexed	3 months, 1 week ago (May 27, 2025, 5:29 a.m.)
Issued	38 years, 6 months ago (Feb. 9, 1987)
Published	38 years, 6 months ago (Feb. 9, 1987)
Published Print	38 years, 6 months ago (Feb. 9, 1987)

Funders 0

None

BibTeX

@article{Kapon_1987, title={Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates}, volume={50}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98196}, DOI={10.1063/1.98196}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kapon, E. and Tamargo, M. C. and Hwang, D. M.}, year={1987}, month=feb, pages={347–349} }

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