DOI: 10.1063/1.98004. Determination of critical layer thickness in In<i>x</i>Ga1−<i>x</i>As/GaAs heterostructures by x-ray diffraction

Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffraction

10.1063/1.98004

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The critical thickness hc of strained InxGa1−xAs layers grown by molecular beam epitaxy on GaAs(100) substrates is determined by double-crystal x-ray diffraction for 0.07≤x≤0.25. The experimental results are in good agreement with critical thicknesses calculated from the energy balance model of R. People and J. C. Bean [Appl. Phys. Lett. 47, 322 (1985)] but differ from prior photoluminescence measurements of hc for this material. Beyond the critical thickness the transition from the strained to the relaxed state occurs more rapidly as the In concentration and hence the lattice mismatch increases.

Bibliography

Orders, P. J., & Usher, B. F. (1987). Determination of critical layer thickness in InxGa1âxAs/GaAs heterostructures by x-ray diffraction. Applied Physics Letters, 50(15), 980â982.

Authors 2

P. J. Orders (first)
B. F. Usher (additional)

References 11 Referenced 179

{'key': '2024020221135720500_r1', 'first-page': '118', 'volume': '27', 'year': '1974', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1974)
10.1063/1.96206 / Appl. Phys. Lett. (1985)
10.1063/1.97637 / Appl. Phys. Lett. (1986)
10.1063/1.95783 / Appl. Phys. Lett. (1985)
10.1063/1.337146 / J. Appl. Phys. (1986)
10.1116/1.572361 / J. Vac. Sci. Technol. A (1984)
10.1016/0022-0248(84)90459-7 / J. Cryst. Growth (1984)
10.1016/0022-0248(78)90292-0 / J. Cryst. Growth (1978)
{'key': '2024020221135720500_r8'}
10.1063/1.97066 / Appl. Phys. Lett. (1986)
{'key': '2024020221135720500_r10'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 4:39 p.m.)
Indexed	1 month ago (July 24, 2025, 8 a.m.)
Issued	38 years, 4 months ago (April 13, 1987)
Published	38 years, 4 months ago (April 13, 1987)
Published Print	38 years, 4 months ago (April 13, 1987)

Funders 0

None

BibTeX

@article{Orders_1987, title={Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffraction}, volume={50}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.98004}, DOI={10.1063/1.98004}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Orders, P. J. and Usher, B. F.}, year={1987}, month=apr, pages={980–982} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        24
      ]
    ],
    "date-time": "2025-07-24T12:00:56Z",
    "timestamp": 1753358456562
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "15",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1987,
        4,
        13
      ]
    ]
  },
  "abstract": "<jats:p>The critical thickness hc of strained InxGa1\u2212xAs layers grown by molecular beam epitaxy on GaAs(100) substrates is determined by double-crystal x-ray diffraction for 0.07\u2264x\u22640.25. The experimental results are in good agreement with critical thicknesses calculated from the energy balance model of R. People and J. C. Bean [Appl. Phys. Lett. 47, 322 (1985)] but differ from prior photoluminescence measurements of hc for this material. Beyond the critical thickness the transition from the strained to the relaxed state occurs more rapidly as the In concentration and hence the lattice mismatch increases.</jats:p>",
  "DOI": "10.1063/1.98004",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:48:42Z",
    "timestamp": 1027687722000
  },
  "page": "980-982",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 179,
  "title": "Determination of critical layer thickness in In<i>x</i>Ga1\u2212<i>x</i>As/GaAs heterostructures by x-ray diffraction",
  "prefix": "10.1063",
  "volume": "50",
  "author": [
    {
      "given": "P. J.",
      "family": "Orders",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Telecom Australia Research Laboratories, 770 Blackburn Road, Clayton, Victoria 3168, Australia"
        }
      ]
    },
    {
      "given": "B. F.",
      "family": "Usher",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Telecom Australia Research Laboratories, 770 Blackburn Road, Clayton, Victoria 3168, Australia"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020221135720500_r1",
      "first-page": "118",
      "volume": "27",
      "year": "1974",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020221135720500_r2",
      "doi-asserted-by": "crossref",
      "first-page": "322",
      "DOI": "10.1063/1.96206",
      "volume": "47",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020221135720500_r2a",
      "doi-asserted-by": "crossref",
      "first-page": "229",
      "DOI": "10.1063/1.97637",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020221135720500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "967",
      "DOI": "10.1063/1.95783",
      "volume": "46",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020221135720500_r4",
      "doi-asserted-by": "crossref",
      "first-page": "2361",
      "DOI": "10.1063/1.337146",
      "volume": "60",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020221135720500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "436",
      "DOI": "10.1116/1.572361",
      "volume": "2",
      "year": "1984",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020221135720500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "523",
      "DOI": "10.1016/0022-0248(84)90459-7",
      "volume": "68",
      "year": "1984",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020221135720500_r7",
      "doi-asserted-by": "crossref",
      "first-page": "513",
      "DOI": "10.1016/0022-0248(78)90292-0",
      "volume": "44",
      "year": "1978",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020221135720500_r8"
    },
    {
      "key": "2024020221135720500_r9",
      "doi-asserted-by": "crossref",
      "first-page": "642",
      "DOI": "10.1063/1.97066",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020221135720500_r10"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/50/15/980/18460913/980_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/50/15/980/18460913/980_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T21:39:24Z",
    "timestamp": 1706909964000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/50/15/980/52274/Determination-of-critical-layer-thickness-in"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1987,
        4,
        13
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "15",
    "published-print": {
      "date-parts": [
        [
          1987,
          4,
          13
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.98004",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1987,
        4,
        13
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1987,
        4,
        13
      ]
    ]
  }
}