Abstract
We demonstrate a novel 10.8 μm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs. Intersubband resonance radiation excites an electron from the ground state into the first excited state, where it rapidly tunnels out producing a photocurrent. We achieve a narrow bandwidth (10%) photosensitivity with a responsivity of 0.52 A/W and an estimated speed of 30 ps.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:48 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 4:39 p.m.) |
Indexed | 4 weeks, 1 day ago (Aug. 7, 2025, 4:45 p.m.) |
Issued | 38 years, 4 months ago (April 20, 1987) |
Published | 38 years, 4 months ago (April 20, 1987) |
Published Print | 38 years, 4 months ago (April 20, 1987) |
@article{Levine_1987, title={New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices}, volume={50}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97928}, DOI={10.1063/1.97928}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Levine, B. F. and Choi, K. K. and Bethea, C. G. and Walker, J. and Malik, R. J.}, year={1987}, month=apr, pages={1092–1094} }