DOI: 10.1063/1.97864. Observation of deep levels in cubic silicon carbide

Observation of deep levels in cubic silicon carbide

10.1063/1.97864

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In this work, a deep level transient spectroscopy (DLTS) study on n-type epitaxial cubic silicon carbide grown on Si substrates has been performed. The results of this study indicate the presence of at least two majority-carrier traps. One trap (SCE1) is located 0.34 eV from the conduction-band edge; the other trap (SCE2) is located 0.68 eV from the conduction-band edge. These two traps have concentrations of approximately 1×1015 cm−3. The DLTS spectrum as a function of the surface treatment of the SiC has been investigated. The results of this investigation indicate that one of the levels (SCE2) appears to be formed as a result of high-temperature thermal oxidation.

Bibliography

Zhou, P., Spencer, M. G., Harris, G. L., & Fekade, K. (1987). Observation of deep levels in cubic silicon carbide. Applied Physics Letters, 50(19), 1384â1385.

Authors 4

Peizhen Zhou (first)
M. G. Spencer (additional)
G. L. Harris (additional)
Konjit Fekade (additional)

References 5 Referenced 32

10.1063/1.93970 / Appl. Phys. Lett. (1983)
10.1149/1.2113921 / J. Electrochem. Soc. (1985)
{'key': '2024020221191550300_r3', 'first-page': '404', 'volume': '42', 'year': '1986', 'journal-title': 'Mater. Lett.'} / Mater. Lett. (1986)
10.1063/1.95502 / Appl. Phys. Lett. (1985)
{'key': '2024020221191550300_r5', 'first-page': '336', 'volume': '49', 'year': '1986', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 4:48 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 4:17 a.m.)
Issued	38 years, 3 months ago (May 11, 1987)
Published	38 years, 3 months ago (May 11, 1987)
Published Print	38 years, 3 months ago (May 11, 1987)

Funders 0

None

BibTeX

@article{Zhou_1987, title={Observation of deep levels in cubic silicon carbide}, volume={50}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97864}, DOI={10.1063/1.97864}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhou, Peizhen and Spencer, M. G. and Harris, G. L. and Fekade, Konjit}, year={1987}, month=may, pages={1384–1385} }

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