DOI: 10.1063/1.97667. Antiphase boundaries in epitaxially grown β-SiC

Antiphase boundaries in epitaxially grown β-SiC

10.1063/1.97667

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

When the surface of β-SiC, grown epitaxially on (001) silicon by chemical vapor deposition, is chemically etched, boundaries appear which may be observed by optical or scanning electron microscopy. Examination by plan-view and cross-sectional transmission electron microscopy shows boundaries in the film which exhibit line or fringe contrast. Convergent beam electron diffraction has been used to show that these boundaries separate domains that are in an antiphase relationship to each other. A model is presented which discusses the formation of these domains from independent nucleation on a stepped substrate surface.

Bibliography

Pirouz, P., Chorey, C. M., & Powell, J. A. (1987). Antiphase boundaries in epitaxially grown Î²-SiC. Applied Physics Letters, 50(4), 221â223.

Authors 3

P. Pirouz (first)
C. M. Chorey (additional)
J. A. Powell (additional)

References 13 Referenced 114

10.1063/1.93970 / Appl. Phys. Lett. (1983)
10.1063/1.94820 / Appl. Phys. Lett. (1984)
10.1149/1.2113921 / J. Electrochem. Soc. (1985)
{'key': '2024020221020923800_r4', 'first-page': '7666', 'volume': '46', 'year': '1983', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1983)
10.1063/1.96860 / Appl. Phys. Lett. (1986)
{'key': '2024020221020923800_r6', 'first-page': '404', 'volume': 'EDL-7', 'year': '1986', 'journal-title': 'IEEE Electron. Device Lett.'} / IEEE Electron. Device Lett. (1986)
{'key': '2024020221020923800_r7'}
{'key': '2024020221020923800_r8'}
10.1016/0022-3697(69)90191-7 / J. Phys. Chem. Solids (1969)
{'key': '2024020221020923800_r10'}
10.1107/S0021889882011352 / J. Appl. Crystallogr. (1982)
10.1143/JJAP.25.L285 / Jpn. J. Appl. Phys. (1986)
{'key': '2024020221020923800_r13', 'first-page': '668', 'volume': '1', 'year': '1983', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1983)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 4:29 p.m.)
Indexed	11 months, 1 week ago (Sept. 19, 2024, 10:52 a.m.)
Issued	38 years, 7 months ago (Jan. 26, 1987)
Published	38 years, 7 months ago (Jan. 26, 1987)
Published Print	38 years, 7 months ago (Jan. 26, 1987)

Funders 0

None

BibTeX

@article{Pirouz_1987, title={Antiphase boundaries in epitaxially grown β-SiC}, volume={50}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97667}, DOI={10.1063/1.97667}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pirouz, P. and Chorey, C. M. and Powell, J. A.}, year={1987}, month=jan, pages={221–223} }

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