DOI: 10.1063/1.97374. Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping

Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping

10.1063/1.97374

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Low-energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates in an attempt to obtain p-type crystals. Low-temperature photoluminescence (PL) measurements of the N-doped ZnSe indicated a formation of shallow acceptors with an activation energy around 110 meV. The PL spectrum in the excitonic emission region was dominated by an acceptor bound-exciton emission I1 at 2.790 eV, suggesting a remarkable increase of an acceptor concentration in comparison with the previous work by MBE using a neutral doping source.

Bibliography

Mitsuyu, T., Ohkawa, K., & Yamazaki, O. (1986). Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping. Applied Physics Letters, 49(20), 1348â1350.

Authors 3

T. Mitsuyu (first)
K. Ohkawa (additional)
O. Yamazaki (additional)

References 10 Referenced 45

10.1016/0022-0248(85)90114-9 / J. Cryst. Growth (1985)
10.1063/1.95126 / Appl. Phys. Lett. (1984)
10.1063/1.95641 / Appl. Phys. Lett. (1985)
10.1063/1.336212 / J. Appl. Phys. (1985)
10.1016/0022-0248(82)90302-5 / J. Cryst. Growth (1982)
10.1016/0022-0248(84)90421-4 / J. Cryst. Growth (1984)
10.1149/1.2128792 / J. Electrochem. Soc. (1979)
{'key': '2024020516044187500_r8', 'first-page': '5710', 'volume': '49', 'year': '1979', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1979)
10.1103/PhysRevB.27.2419 / Phys. Rev. B (1983)
10.1002/pssa.2210810225 / Phys. Status Solidi A (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 11:20 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:41 a.m.)
Issued	38 years, 9 months ago (Nov. 17, 1986)
Published	38 years, 9 months ago (Nov. 17, 1986)
Published Print	38 years, 9 months ago (Nov. 17, 1986)

Funders 0

None

BibTeX

@article{Mitsuyu_1986, title={Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping}, volume={49}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97374}, DOI={10.1063/1.97374}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mitsuyu, T. and Ohkawa, K. and Yamazaki, O.}, year={1986}, month=nov, pages={1348–1350} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T16:41:19Z",
    "timestamp": 1707151279528
  },
  "reference-count": 10,
  "publisher": "AIP Publishing",
  "issue": "20",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1986,
        11,
        17
      ]
    ]
  },
  "abstract": "<jats:p>Low-energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates in an attempt to obtain p-type crystals. Low-temperature photoluminescence (PL) measurements of the N-doped ZnSe indicated a formation of shallow acceptors with an activation energy around 110 meV. The PL spectrum in the excitonic emission region was dominated by an acceptor bound-exciton emission I1 at 2.790 eV, suggesting a remarkable increase of an acceptor concentration in comparison with the previous work by MBE using a neutral doping source.</jats:p>",
  "DOI": "10.1063/1.97374",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:46:49Z",
    "timestamp": 1027687609000
  },
  "page": "1348-1350",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 45,
  "title": "Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping",
  "prefix": "10.1063",
  "volume": "49",
  "author": [
    {
      "given": "T.",
      "family": "Mitsuyu",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Central Research Laboratories, Matsushita Electric Industrial Company, Ltd., Moriguchi, Osaka 570, Japan"
        }
      ]
    },
    {
      "given": "K.",
      "family": "Ohkawa",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Central Research Laboratories, Matsushita Electric Industrial Company, Ltd., Moriguchi, Osaka 570, Japan"
        }
      ]
    },
    {
      "given": "O.",
      "family": "Yamazaki",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Central Research Laboratories, Matsushita Electric Industrial Company, Ltd., Moriguchi, Osaka 570, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020516044187500_r1",
      "doi-asserted-by": "crossref",
      "first-page": "31",
      "DOI": "10.1016/0022-0248(85)90114-9",
      "volume": "72",
      "year": "1985",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020516044187500_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1300",
      "DOI": "10.1063/1.95126",
      "volume": "45",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020516044187500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "386",
      "DOI": "10.1063/1.95641",
      "volume": "46",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020516044187500_r4",
      "doi-asserted-by": "crossref",
      "first-page": "1047",
      "DOI": "10.1063/1.336212",
      "volume": "58",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020516044187500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1016/0022-0248(82)90302-5",
      "volume": "59",
      "year": "1982",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020516044187500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "231",
      "DOI": "10.1016/0022-0248(84)90421-4",
      "volume": "68",
      "year": "1984",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020516044187500_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1761",
      "DOI": "10.1149/1.2128792",
      "volume": "126",
      "year": "1979",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020516044187500_r8",
      "first-page": "5710",
      "volume": "49",
      "year": "1979",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020516044187500_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2419",
      "DOI": "10.1103/PhysRevB.27.2419",
      "volume": "27",
      "year": "1983",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020516044187500_r10",
      "doi-asserted-by": "crossref",
      "first-page": "625",
      "DOI": "10.1002/pssa.2210810225",
      "volume": "81",
      "year": "1984",
      "journal-title": "Phys. Status Solidi A"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/49/20/1348/18458941/1348_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/49/20/1348/18458941/1348_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T16:20:50Z",
    "timestamp": 1707150050000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/49/20/1348/51681/Photoluminescence-properties-of-nitrogen-doped"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1986,
        11,
        17
      ]
    ]
  },
  "references-count": 10,
  "journal-issue": {
    "issue": "20",
    "published-print": {
      "date-parts": [
        [
          1986,
          11,
          17
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.97374",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1986,
        11,
        17
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1986,
        11,
        17
      ]
    ]
  }
}