DOI: 10.1063/1.97325. Lateral solid phase epitaxy in selectively P-doped amorphous Si films

Lateral solid phase epitaxy in selectively P-doped amorphous Si films

10.1063/1.97325

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A selective doping method of P atoms is proposed in lateral solid phase epitaxy (L-SPE) of amorphous Si films, in which L-SPE mainly proceeds along the P-doped regions and active devices are fabricated in the undoped regions. It was found that diffusion of P atoms into the undoped region was negligible during L-SPE growth at 600 °C for about 20 h. Usefulness of this method was demonstrated by fabricating metal-oxide-semiconductor field-effect transistors in the films, in which the P-doped regions were used as the source and drain regions and the undoped region was used as a channel between them.

Bibliography

Ishiwara, H., Tanaka, M., & Furukawa, S. (1986). Lateral solid phase epitaxy in selectively P-doped amorphous Si films. Applied Physics Letters, 49(20), 1363â1365.

Authors 3

Hiroshi Ishiwara (first)
Makoto Tanaka (additional)
Seijiro Furukawa (additional)

References 7 Referenced 7

10.1063/1.332275 / J. Appl. Phys. (1983)
10.1063/1.94217 / Appl. Phys. Lett. (1983)
10.1063/1.333958 / J. Appl. Phys. (1984)
10.1063/1.95653 / Appl. Phys. Lett. (1985)
10.1143/JJAP.24.411 / Jpn. J. Appl. Phys. (1985)
10.1063/1.96717 / Appl. Phys. Lett. (1986)
10.1143/JJAP.25.667 / Jpn. J. Appl. Phys. (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 11:22 a.m.)
Indexed	1 year, 6 months ago (Feb. 29, 2024, 11:04 a.m.)
Issued	38 years, 9 months ago (Nov. 17, 1986)
Published	38 years, 9 months ago (Nov. 17, 1986)
Published Print	38 years, 9 months ago (Nov. 17, 1986)

Funders 0

None

BibTeX

@article{Ishiwara_1986, title={Lateral solid phase epitaxy in selectively P-doped amorphous Si films}, volume={49}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97325}, DOI={10.1063/1.97325}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ishiwara, Hiroshi and Tanaka, Makoto and Furukawa, Seijiro}, year={1986}, month=nov, pages={1363–1365} }

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