DOI: 10.1063/1.97276. Hot-electron capture to D X centers in AlxGa1−xAs at low Al mole fractions (x&lt;0.2)

Hot-electron capture to D X centers in AlxGa1−xAs at low Al mole fractions (x&lt;0.2)

10.1063/1.97276

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report quantitative studies of hot-electron trapping by DX centers in short channel GaAs/n-AlxGa1−x As field-effect transistors. A remarkable result is that persistent hot-electron capture occurs even at very low values of the Al mole fraction, x≲0.2, where thermal capture is not observed. Thermal emission studies confirm that the trap state is associated with the DX center. Thus, for x≲0.2 the trap state is metastable, but can be persistently populated by heating the free electrons with an electric field. This and other features of the capture process support a large lattice relaxation model of the center.

Bibliography

Theis, T. N., Parker, B. D., Solomon, P. M., & Wright, S. L. (1986). Hot-electron capture to D X centers in AlxGa1âxAs at low Al mole fractions (x<0.2). Applied Physics Letters, 49(22), 1542â1544.

Authors 4

T. N. Theis (first)
B. D. Parker (additional)
P. M. Solomon (additional)
S. L. Wright (additional)

References 17 Referenced 48

10.1063/1.89696 / Appl. Phys. Lett. (1977)
10.1103/PhysRevLett.39.635 / Phys. Rev. Lett. (1977)
10.1103/PhysRevB.19.1015 / Phys. Rev. B (1979)
{'key': '2024020220551735400_r4'}
10.1063/1.97028 / Appl. Phys. Lett. (1986)
{'key': '2024020220551735400_r6', 'first-page': '385', 'volume': '65', 'year': '1982', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1982)
{'key': '2024020220551735400_r7', 'first-page': '1028', 'volume': 'ED-31', 'year': '1984', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1984)
{'key': '2024020220551735400_r8', 'first-page': '473', 'volume': 'EDL-6', 'year': '1985', 'journal-title': 'IEEE Electron. Device Lett.'} / IEEE Electron. Device Lett. (1985)
{'key': '2024020220551735400_r9', 'first-page': '414', 'volume': 'ED-33', 'year': '1986', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1986)
10.1143/JJAP.24.L928 / Jpn. J. Appl. Phys. (1985)
10.1103/PhysRevB.33.4320 / Phys. Rev. B (1986)
10.1103/PhysRevB.34.2664 / Phys. Rev. B (1986)
10.1049/el:19760229 / Electron. Lett. (1976)
{'key': '2024020220551735400_r14'}
{'key': '2024020220551735400_r15'}
10.1143/JJAP.23.1594 / Jpn. J. Appl. Phys. (1984)
{'key': '2024020220551735400_r17', 'first-page': '564', 'volume': 'ED-33', 'year': '1986', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 4:25 p.m.)
Indexed	5 months ago (March 29, 2025, 12:12 p.m.)
Issued	38 years, 9 months ago (Dec. 1, 1986)
Published	38 years, 9 months ago (Dec. 1, 1986)
Published Print	38 years, 9 months ago (Dec. 1, 1986)

Funders 0

None

BibTeX

@article{Theis_1986, title={Hot-electron capture to D X centers in AlxGa1‚àíxAs at low Al mole fractions (x&lt;0.2)}, volume={49}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97276}, DOI={10.1063/1.97276}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Theis, T. N. and Parker, B. D. and Solomon, P. M. and Wright, S. L.}, year={1986}, month=dec, pages={1542‚Äì1544} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        3,
        29
      ]
    ],
    "date-time": "2025-03-29T16:12:46Z",
    "timestamp": 1743264766335
  },
  "reference-count": 17,
  "publisher": "AIP Publishing",
  "issue": "22",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1986,
        12,
        1
      ]
    ]
  },
  "abstract": "<jats:p>We report quantitative studies of hot-electron trapping by DX centers in short channel GaAs/n-AlxGa1\u2212x As field-effect transistors. A remarkable result is that persistent hot-electron capture occurs even at very low values of the Al mole fraction, x\u22720.2, where thermal capture is not observed. Thermal emission studies confirm that the trap state is associated with the DX center. Thus, for x\u22720.2 the trap state is metastable, but can be persistently populated by heating the free electrons with an electric field. This and other features of the capture process support a large lattice relaxation model of the center.</jats:p>",
  "DOI": "10.1063/1.97276",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:46:49Z",
    "timestamp": 1027687609000
  },
  "page": "1542-1544",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 48,
  "title": "Hot-electron capture to <i>D</i>\n                  <i>X</i> centers in Al<i>x</i>Ga1\u2212<i>x</i>As at low Al mole fractions (<i>x</i>&amp;lt;0.2)",
  "prefix": "10.1063",
  "volume": "49",
  "author": [
    {
      "given": "T. N.",
      "family": "Theis",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "B. D.",
      "family": "Parker",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "P. M.",
      "family": "Solomon",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "S. L.",
      "family": "Wright",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020220551735400_r1",
      "doi-asserted-by": "crossref",
      "first-page": "351",
      "DOI": "10.1063/1.89696",
      "volume": "31",
      "year": "1977",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020220551735400_r2",
      "doi-asserted-by": "crossref",
      "first-page": "635",
      "DOI": "10.1103/PhysRevLett.39.635",
      "volume": "39",
      "year": "1977",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020220551735400_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1015",
      "DOI": "10.1103/PhysRevB.19.1015",
      "volume": "19",
      "year": "1979",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020220551735400_r4"
    },
    {
      "key": "2024020220551735400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1374",
      "DOI": "10.1063/1.97028",
      "volume": "48",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020220551735400_r6",
      "first-page": "385",
      "volume": "65",
      "year": "1982",
      "journal-title": "Inst. Phys. Conf. Ser."
    },
    {
      "key": "2024020220551735400_r7",
      "first-page": "1028",
      "volume": "ED-31",
      "year": "1984",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020220551735400_r8",
      "first-page": "473",
      "volume": "EDL-6",
      "year": "1985",
      "journal-title": "IEEE Electron. Device Lett."
    },
    {
      "key": "2024020220551735400_r9",
      "first-page": "414",
      "volume": "ED-33",
      "year": "1986",
      "journal-title": "IEEE Trans. Electron. Devices"
    },
    {
      "key": "2024020220551735400_r10",
      "doi-asserted-by": "crossref",
      "first-page": "L928",
      "DOI": "10.1143/JJAP.24.L928",
      "volume": "24",
      "year": "1985",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020220551735400_r11",
      "doi-asserted-by": "crossref",
      "first-page": "4320",
      "DOI": "10.1103/PhysRevB.33.4320",
      "volume": "33",
      "year": "1986",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020220551735400_r12",
      "doi-asserted-by": "crossref",
      "first-page": "2664",
      "DOI": "10.1103/PhysRevB.34.2664",
      "volume": "34",
      "year": "1986",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020220551735400_r13",
      "doi-asserted-by": "crossref",
      "first-page": "297",
      "DOI": "10.1049/el:19760229",
      "volume": "12",
      "year": "1976",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2024020220551735400_r14"
    },
    {
      "key": "2024020220551735400_r15"
    },
    {
      "key": "2024020220551735400_r16",
      "doi-asserted-by": "crossref",
      "first-page": "1594",
      "DOI": "10.1143/JJAP.23.1594",
      "volume": "23",
      "year": "1984",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020220551735400_r17",
      "first-page": "564",
      "volume": "ED-33",
      "year": "1986",
      "journal-title": "IEEE Trans. Electron. Devices"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/49/22/1542/18459210/1542_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/49/22/1542/18459210/1542_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T21:25:51Z",
    "timestamp": 1706909151000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/49/22/1542/51670/Hot-electron-capture-to-DX-centers-in-AlxGa1-xAs"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1986,
        12,
        1
      ]
    ]
  },
  "references-count": 17,
  "journal-issue": {
    "issue": "22",
    "published-print": {
      "date-parts": [
        [
          1986,
          12,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.97276",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1986,
        12,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1986,
        12,
        1
      ]
    ]
  }
}