Abstract
Electron spin resonance spectra obtained on polycrystalline silicon produced by annealing of chemical vapor deposition silicon are investigated before and after plasma hydrogenation of the material. Before hydrogenation, two paramagnetic defects are observed, one of them remaining unidentified (g=2.0084). Hydrogenation decreases the total spin density, but the two defects are affected differently; the defect with g=2.0084 is more efficiently passivated. The results are discussed in terms of the inter- and intragranular nature of the paramagnetic defects and of hydrogen diffusivity in the polycrystal.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:46 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 4:26 p.m.) |
Indexed | 3 months ago (May 27, 2025, 10:58 a.m.) |
Issued | 38 years, 8 months ago (Dec. 8, 1986) |
Published | 38 years, 8 months ago (Dec. 8, 1986) |
Published Print | 38 years, 8 months ago (Dec. 8, 1986) |
@article{Ballutaud_1986, title={Electron spin resonance study of hydrogenation effects in polycrystalline silicon}, volume={49}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97247}, DOI={10.1063/1.97247}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ballutaud, Dominique and Aucouturier, Marc and Babonneau, Florence}, year={1986}, month=dec, pages={1620–1622} }