Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Electron spin resonance spectra obtained on polycrystalline silicon produced by annealing of chemical vapor deposition silicon are investigated before and after plasma hydrogenation of the material. Before hydrogenation, two paramagnetic defects are observed, one of them remaining unidentified (g=2.0084). Hydrogenation decreases the total spin density, but the two defects are affected differently; the defect with g=2.0084 is more efficiently passivated. The results are discussed in terms of the inter- and intragranular nature of the paramagnetic defects and of hydrogen diffusivity in the polycrystal.

Bibliography

Ballutaud, D., Aucouturier, M., & Babonneau, F. (1986). Electron spin resonance study of hydrogenation effects in polycrystalline silicon. Applied Physics Letters, 49(23), 1620–1622.

Authors 3
  1. Dominique Ballutaud (first)
  2. Marc Aucouturier (additional)
  3. Florence Babonneau (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited 1 year, 7 months ago (Feb. 2, 2024, 4:26 p.m.)
Indexed 3 months ago (May 27, 2025, 10:58 a.m.)
Issued 38 years, 8 months ago (Dec. 8, 1986)
Published 38 years, 8 months ago (Dec. 8, 1986)
Published Print 38 years, 8 months ago (Dec. 8, 1986)
Funders 0

None

@article{Ballutaud_1986, title={Electron spin resonance study of hydrogenation effects in polycrystalline silicon}, volume={49}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97247}, DOI={10.1063/1.97247}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ballutaud, Dominique and Aucouturier, Marc and Babonneau, Florence}, year={1986}, month=dec, pages={1620–1622} }