DOI: 10.1063/1.97204. New approach to the high quality epitaxial growth of lattice-mismatched materials

New approach to the high quality epitaxial growth of lattice-mismatched materials

10.1063/1.97204

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have reconsidered the problem of the critical layer thickness hc for growth of strained heterolayers on lattice-mismatched substrates, using a new approach which allows us to determine the spatial distribution of stresses in a bi-material assembly and include the effects of a finite size of the sample. The possibility of dislocation-free growth of lattice-mismatched materials on porous silicon substrates is discussed as an example of a more general problem of heteroepitaxial growth on small seed pads of lateral dimension l, having a uniform crystal orientation over the entire substrate wafer. It turns out that for a given mismatch f, the critical film thickness hlc strongly depends on l, rising sharply when the latter is sufficiently small, l≲lmin. The characteristic size lmin( f ) below which, effectively, hlc( f )→∞, is determined in terms of the experimentally known (or calculated for growth on a monolithic substrate) function h∞c( f )≡hc( f ). When l≲lmin, then the entire elastic stress in the epitaxial film will be accommodated without dislocations.

Bibliography

Luryi, S., & Suhir, E. (1986). New approach to the high quality epitaxial growth of lattice-mismatched materials. Applied Physics Letters, 49(3), 140â142.

Authors 2

Serge Luryi (first)
Ephraim Suhir (additional)

References 9 Referenced 336

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10.1063/1.96206 / Appl. Phys. Lett. (1985)
10.1016/0038-1101(81)90012-5 / Solid State Electron. (1981)
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Dates

Type	When
Created	23 years ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 11:04 a.m.)
Indexed	2 months ago (June 16, 2025, 8:07 a.m.)
Issued	39 years, 1 month ago (July 21, 1986)
Published	39 years, 1 month ago (July 21, 1986)
Published Print	39 years, 1 month ago (July 21, 1986)

Funders 0

None

BibTeX

@article{Luryi_1986, title={New approach to the high quality epitaxial growth of lattice-mismatched materials}, volume={49}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97204}, DOI={10.1063/1.97204}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Luryi, Serge and Suhir, Ephraim}, year={1986}, month=jul, pages={140–142} }

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