DOI: 10.1063/1.97077. Electrical characteristics of InAsSb/GaSb heterojunctions

Electrical characteristics of InAsSb/GaSb heterojunctions

10.1063/1.97077

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Heterojunctions of n-type InAs0.95Sb0.05 grown by metalorganic chemical vapor deposition on n-type GaSb substrates were studied by capacitance-voltage and current-voltage measurements. The n-n heterojunctions are strongly rectifying and behave like metal-(n) GaSb Schottky diodes with a barrier height of 0.80±0.02 eV. These measurements establish that the band lineup in this system is of the broken gap variety. We measure the valence-band offset, Ev(GaSb)−Ev(InAs0.95Sb0.05), to be 0.67±0.04 eV.

Bibliography

Srivastava, A. K., Zyskind, J. L., Lum, R. M., Dutt, B. V., & Klingert, J. K. (1986). Electrical characteristics of InAsSb/GaSb heterojunctions. Applied Physics Letters, 49(1), 41â43.

Authors 5

A. K. Srivastava (first)
J. L. Zyskind (additional)
R. M. Lum (additional)
B. V. Dutt (additional)
J. K. Klingert (additional)

References 13 Referenced 38

{'key': '2024020515465378000_r1', 'first-page': '566', 'volume': 'LT-2', 'year': '1984', 'journal-title': 'J. Lightwave Technol.'} / J. Lightwave Technol. (1984)
10.1126/science.226.4675.663 / Science (1984)
{'key': '2024020515465378000_r3'}
10.1116/1.569312 / J. Vac. Sci. Technol. (1977)
10.1063/1.89609 / Appl. Phys. Lett. (1977)
10.1016/0038-1098(78)91010-4 / Solid State Commun. (1978)
10.1007/BF02652405 / J. Electron. Mater. (1979)
{'key': '2024020515465378000_r8', 'first-page': '215', 'volume': '27', 'year': '1982', 'journal-title': 'Sov. Phys. Tech. Phys.'} / Sov. Phys. Tech. Phys. (1982)
10.1063/1.95659 / Appl. Phys. Lett. (1985)
10.1016/0038-1101(85)90198-4 / Solid State Electron. (1985)
{'key': '2024020515465378000_r11'}
10.1103/PhysRevB.30.4874 / Phys. Rev. B (1984)
10.1103/PhysRevB.16.2642 / Phys. Rev. B (1977)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 11:01 a.m.)
Indexed	1 year, 2 months ago (July 2, 2024, 3:09 a.m.)
Issued	39 years, 1 month ago (July 7, 1986)
Published	39 years, 1 month ago (July 7, 1986)
Published Print	39 years, 1 month ago (July 7, 1986)

Funders 0

None

BibTeX

@article{Srivastava_1986, title={Electrical characteristics of InAsSb/GaSb heterojunctions}, volume={49}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97077}, DOI={10.1063/1.97077}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Srivastava, A. K. and Zyskind, J. L. and Lum, R. M. and Dutt, B. V. and Klingert, J. K.}, year={1986}, month=jul, pages={41–43} }

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