DOI: 10.1063/1.97028. Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/Al<i>x</i>Ga1−<i>x</i>As heterojunctions

Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions

10.1063/1.97028

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present experimental results which clearly separate the various physical mechanisms which cause persistent photoconductivity in GaAs/AlxGa1−xAs heterojunctions. For high Al mole fraction the major contribution is from the donor-related DX center. This contribution is eliminated by reducing the Al mole fraction x, but we observe a ‘‘residual’’ effect for x≲0.2. We show that this is due to the persistent photovoltage developed between channel and semi-insulating substrate. Charge trapping in the epitaxial GaAs buffer layer contributes negligibly, contrary to the assumptions of other workers. This is demonstrated by fabricating modulation-doped field-effect transistors of low Al mole fraction on conductive substrates. In these devices persistent photoconductivity is eliminated as long as the substrate (back gate) potential is fixed with respect to the channel.

Bibliography

Theis, T. N., & Wright, S. L. (1986). Origin of ââresidualââ persistent photoconductivity in selectively doped GaAs/AlxGa1âxAs heterojunctions. Applied Physics Letters, 48(20), 1374â1376.

Authors 2

T. N. Theis (first)
S. L. Wright (additional)

References 21 Referenced 30

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{'key': '2024020515400211200_r5', 'first-page': '1806', 'volume': 'ED-30', 'year': '1983', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1983)
10.1016/0038-1098(84)90696-3 / Solid State Commun. (1984)
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{'key': '2024020515400211200_r8'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 10:57 a.m.)
Indexed	1 year ago (Aug. 22, 2024, 6:12 p.m.)
Issued	39 years, 3 months ago (May 19, 1986)
Published	39 years, 3 months ago (May 19, 1986)
Published Print	39 years, 3 months ago (May 19, 1986)

Funders 0

None

BibTeX

@article{Theis_1986, title={Origin of ‘“residual”’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions}, volume={48}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.97028}, DOI={10.1063/1.97028}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Theis, T. N. and Wright, S. L.}, year={1986}, month=may, pages={1374–1376} }

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