DOI: 10.1063/1.96833. Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high-energy electron diffraction during molecular beam epitaxy

Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high-energy electron diffraction during molecular beam epitaxy

10.1063/1.96833

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Layer-by-layer alternating surface reconstructions of Si(001) 2×1 and 1×2 have been observed for the first time using reflection high-energy electron diffraction (RHEED) during molecular beam epitaxy. RHEED intensity oscillations of the specular beam and two kinds of reconstruction related spots have been monitored simultaneously. It was found that stable alternating reconstructions can be observed on the surface with a single-domain 2×1 structure obtained by high-temperature annealing. One period of the RHEED intensity oscillation observed for the specular beam during the growth corresponds to a monatomic layer or a biatomic layer height depending not only on the electron beam incident azimuth but also the glancing angle.

Bibliography

Sakamoto, T., Kawamura, T., & Hashiguchi, G. (1986). Observation of alternating reconstructions of siliconâ(001) 2Ã1 and 1Ã2 using reflection high-energy electron diffraction during molecular beam epitaxy. Applied Physics Letters, 48(23), 1612â1614.

Authors 3

T. Sakamoto (first)
T. Kawamura (additional)
G. Hashiguchi (additional)

References 9 Referenced 93

10.1007/BF00617180 / Appl. Phys. A (1983)
10.1116/1.582684 / J. Vac. Sci. Technol. B (1983)
10.1116/1.582887 / J. Vac. Sci. Technol. B (1984)
10.1143/JJAP.23.L657 / Jpn. J. Appl. Phys. (1984)
10.1063/1.96091 / Appl. Phys. Lett. (1985)
10.1143/JJAP.25.L78 / Jpn. J. Appl. Phys. (1986)
10.1016/0039-6028(84)90574-0 / Surf. Sci. (1984)
10.1016/0039-6028(85)90724-1 / Surf. Sci. (1985)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 10:59 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:40 a.m.)
Issued	39 years, 2 months ago (June 9, 1986)
Published	39 years, 2 months ago (June 9, 1986)
Published Print	39 years, 2 months ago (June 9, 1986)

Funders 0

None

BibTeX

@article{Sakamoto_1986, title={Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high-energy electron diffraction during molecular beam epitaxy}, volume={48}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96833}, DOI={10.1063/1.96833}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sakamoto, T. and Kawamura, T. and Hashiguchi, G.}, year={1986}, month=jun, pages={1612–1614} }

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