DOI: 10.1063/1.96789. 100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

10.1063/1.96789

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

100-μm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm2 V−1 s−1 with a doping concentration of 6×1015 cm−3 has been achieved.

Bibliography

Lin, T. L., Chen, S. C., Kao, Y. C., Wang, K. L., & Iyer, S. (1986). 100-Î¼m-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon. Applied Physics Letters, 48(26), 1793â1795.

Authors 5

T. L. Lin (first)
S. C. Chen (additional)
Y. C. Kao (additional)
K. L. Wang (additional)
S. Iyer (additional)

References 6 Referenced 21

10.1149/1.2131674 / J. Electrochem. Soc. (1978)
{'key': '2024020515450495600_r2', 'first-page': '231', 'volume': '19', 'year': '1980', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1980)
10.1143/JJAP.20.703 / Jpn. J. Appl. Phys. (1981)
10.1063/1.93298 / Appl. Phys. Lett. (1982)
{'key': '2024020515450495600_r5'}
10.1143/JJAP.21.534 / Jpn. J. Appl. Phys. (1982)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 10:59 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:41 a.m.)
Issued	39 years, 1 month ago (June 30, 1986)
Published	39 years, 1 month ago (June 30, 1986)
Published Print	39 years, 1 month ago (June 30, 1986)

Funders 0

None

BibTeX

@article{Lin_1986, title={100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon}, volume={48}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96789}, DOI={10.1063/1.96789}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lin, T. L. and Chen, S. C. and Kao, Y. C. and Wang, K. L. and Iyer, S.}, year={1986}, month=jun, pages={1793–1795} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T16:41:31Z",
    "timestamp": 1707151291560
  },
  "reference-count": 6,
  "publisher": "AIP Publishing",
  "issue": "26",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1986,
        6,
        30
      ]
    ]
  },
  "abstract": "<jats:p>100-\u03bcm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm2\u2009V\u22121\u2009s\u22121 with a doping concentration of 6\u00d71015 cm\u22123 has been achieved.</jats:p>",
  "DOI": "10.1063/1.96789",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:46:49Z",
    "timestamp": 1027687609000
  },
  "page": "1793-1795",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 21,
  "title": "100-\u03bcm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon",
  "prefix": "10.1063",
  "volume": "48",
  "author": [
    {
      "given": "T. L.",
      "family": "Lin",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California 90024"
        }
      ]
    },
    {
      "given": "S. C.",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California 90024"
        }
      ]
    },
    {
      "given": "Y. C.",
      "family": "Kao",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California 90024"
        }
      ]
    },
    {
      "given": "K. L.",
      "family": "Wang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California 90024"
        }
      ]
    },
    {
      "given": "S.",
      "family": "Iyer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020515450495600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1339",
      "DOI": "10.1149/1.2131674",
      "volume": "125",
      "year": "1978",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020515450495600_r2",
      "first-page": "231",
      "volume": "19",
      "year": "1980",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020515450495600_r3",
      "doi-asserted-by": "crossref",
      "first-page": "703",
      "DOI": "10.1143/JJAP.20.703",
      "volume": "20",
      "year": "1981",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020515450495600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "86",
      "DOI": "10.1063/1.93298",
      "volume": "41",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020515450495600_r5"
    },
    {
      "key": "2024020515450495600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "534",
      "DOI": "10.1143/JJAP.21.534",
      "volume": "21",
      "year": "1982",
      "journal-title": "Jpn. J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/48/26/1793/18457562/1793_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/48/26/1793/18457562/1793_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T15:59:35Z",
    "timestamp": 1707148775000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/48/26/1793/50785/100-m-wide-silicon-on-insulator-structures-by-Si"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1986,
        6,
        30
      ]
    ]
  },
  "references-count": 6,
  "journal-issue": {
    "issue": "26",
    "published-print": {
      "date-parts": [
        [
          1986,
          6,
          30
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.96789",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1986,
        6,
        30
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1986,
        6,
        30
      ]
    ]
  }
}