DOI: 10.1063/1.96761. Stability of semiconductor strained-layer superlattices

Stability of semiconductor strained-layer superlattices

10.1063/1.96761

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The criteria for strained-layer growth of semiconductor superlattices are discussed. It is shown that to avoid misfit dislocations, careful attention has to be paid to the composition, geometry, and dimensions of the quantum well structure. Two critical thicknesses are found to apply to strained-layer superlattice growth, one relating to the thickness of individual layers and one relating to the overall thickness of the superlattice. We derive the relationship between these two critical values. Experimental studies of the GexSi1−x/Si on Si and GexSi1−x/Ge on Ge systems using electron microscopy, Raman scattering, and ion channeling show that exceeding the critical superlattice thickness results in a network of dislocations between the substrate and first superlattice layer.

Bibliography

Hull, R., Bean, J. C., Cerdeira, F., Fiory, A. T., & Gibson, J. M. (1986). Stability of semiconductor strained-layer superlattices. Applied Physics Letters, 48(1), 56â58.

Authors 5

R. Hull (first)
J. C. Bean (additional)
F. Cerdeira (additional)
A. T. Fiory (additional)
J. M. Gibson (additional)

References 13 Referenced 144

10.1147/rd.141.0061 / IBM J. Res. Dev. (1970)
10.1063/1.90457 / Appl. Phys. Lett. (1978)
10.1063/1.332243 / J. Appl. Phys. (1983)
10.1007/BF02676793 / J. Electron. Mater. (1983)
{'key': '2024020515201542300_r5'}
10.1007/BF00896611 / Appl. Phys. (1975)
10.1116/1.572361 / J. Vac. Sci. Technol. A (1984)
{'key': '2024020515201542300_r8'}
10.1016/0042-207X(78)90014-3 / Vacuum (1978)
10.1063/1.95014 / Appl. Phys. Lett. (1984)
10.1103/PhysRevB.31.4063 / Phys. Rev. B (1985)
{'key': '2024020515201542300_r12', 'first-page': '265', 'volume': '32', 'year': '1974', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1974)
10.1063/1.95542 / Appl. Phys. Lett. (1985)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 10:35 a.m.)
Indexed	5 months ago (March 31, 2025, 12:26 p.m.)
Issued	39 years, 7 months ago (Jan. 6, 1986)
Published	39 years, 7 months ago (Jan. 6, 1986)
Published Print	39 years, 7 months ago (Jan. 6, 1986)

Funders 0

None

BibTeX

@article{Hull_1986, title={Stability of semiconductor strained-layer superlattices}, volume={48}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96761}, DOI={10.1063/1.96761}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hull, R. and Bean, J. C. and Cerdeira, F. and Fiory, A. T. and Gibson, J. M.}, year={1986}, month=jan, pages={56–58} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        3,
        31
      ]
    ],
    "date-time": "2025-03-31T16:26:57Z",
    "timestamp": 1743438417964
  },
  "reference-count": 13,
  "publisher": "AIP Publishing",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1986,
        1,
        6
      ]
    ]
  },
  "abstract": "<jats:p>The criteria for strained-layer growth of semiconductor superlattices are discussed. It is shown that to avoid misfit dislocations, careful attention has to be paid to the composition, geometry, and dimensions of the quantum well structure. Two critical thicknesses are found to apply to strained-layer superlattice growth, one relating to the thickness of individual layers and one relating to the overall thickness of the superlattice. We derive the relationship between these two critical values. Experimental studies of the GexSi1\u2212x/Si on Si and GexSi1\u2212x/Ge on Ge systems using electron microscopy, Raman scattering, and ion channeling show that exceeding the critical superlattice thickness results in a network of dislocations between the substrate and first superlattice layer.</jats:p>",
  "DOI": "10.1063/1.96761",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:03:23Z",
    "timestamp": 1027688603000
  },
  "page": "56-58",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 144,
  "title": "Stability of semiconductor strained-layer superlattices",
  "prefix": "10.1063",
  "volume": "48",
  "author": [
    {
      "given": "R.",
      "family": "Hull",
      "sequence": "first",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "J. C.",
      "family": "Bean",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "F.",
      "family": "Cerdeira",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "A. T.",
      "family": "Fiory",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "J. M.",
      "family": "Gibson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020515201542300_r1",
      "doi-asserted-by": "crossref",
      "first-page": "61",
      "DOI": "10.1147/rd.141.0061",
      "volume": "14",
      "year": "1970",
      "journal-title": "IBM J. Res. Dev."
    },
    {
      "key": "2024020515201542300_r2",
      "doi-asserted-by": "crossref",
      "first-page": "665",
      "DOI": "10.1063/1.90457",
      "volume": "33",
      "year": "1978",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020515201542300_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1892",
      "DOI": "10.1063/1.332243",
      "volume": "54",
      "year": "1983",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020515201542300_r4",
      "doi-asserted-by": "crossref",
      "first-page": "637",
      "DOI": "10.1007/BF02676793",
      "volume": "12",
      "year": "1983",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020515201542300_r5"
    },
    {
      "key": "2024020515201542300_r6",
      "doi-asserted-by": "crossref",
      "first-page": "199",
      "DOI": "10.1007/BF00896611",
      "volume": "8",
      "year": "1975",
      "journal-title": "Appl. Phys."
    },
    {
      "key": "2024020515201542300_r7",
      "doi-asserted-by": "crossref",
      "first-page": "436",
      "DOI": "10.1116/1.572361",
      "volume": "2",
      "year": "1984",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020515201542300_r8"
    },
    {
      "key": "2024020515201542300_r9",
      "doi-asserted-by": "crossref",
      "first-page": "571",
      "DOI": "10.1016/0042-207X(78)90014-3",
      "volume": "28",
      "year": "1978",
      "journal-title": "Vacuum"
    },
    {
      "key": "2024020515201542300_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1138",
      "DOI": "10.1063/1.95014",
      "volume": "45",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020515201542300_r11",
      "doi-asserted-by": "crossref",
      "first-page": "4063",
      "DOI": "10.1103/PhysRevB.31.4063",
      "volume": "31",
      "year": "1985",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020515201542300_r12",
      "first-page": "265",
      "volume": "32",
      "year": "1974",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020515201542300_r13",
      "doi-asserted-by": "crossref",
      "first-page": "569",
      "DOI": "10.1063/1.95542",
      "volume": "46",
      "year": "1985",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/48/1/56/18455901/56_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/48/1/56/18455901/56_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T15:35:29Z",
    "timestamp": 1707147329000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/48/1/56/50236/Stability-of-semiconductor-strained-layer"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1986,
        1,
        6
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          1986,
          1,
          6
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.96761",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1986,
        1,
        6
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1986,
        1,
        6
      ]
    ]
  }
}