DOI: 10.1063/1.96717. Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

10.1063/1.96717

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films onto nonplanar SiO2 patterns on Si(100) substrates was investigated. The patterns were formed by local oxidation of silicon (LOCOS) and the thickness of the SiO2 films ranged from 60 to 470 nm. The L-SPE characteristics similar to those for planar patterns were observed in dense a-Si films prepared by high-temperature vacuum deposition and subsequent ion implantation. The maximum L-SPE lengths onto the LOCOS patterns were 4.5, 6.5, and 44 μm in undoped, B-doped, and P-doped samples, respectively.

Bibliography

Ishiwara, H., Tamba, A., & Furukawa, S. (1986). Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates. Applied Physics Letters, 48(12), 773â775.

Authors 3

Hiroshi Ishiwara (first)
Akihiro Tamba (additional)
Seijiro Furukawa (additional)

References 8 Referenced 15

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10.1063/1.94217 / Appl. Phys. Lett. (1983)
10.1063/1.95653 / Appl. Phys. Lett. (1985)
10.1143/JJAP.24.L352 / Jpn. J. Appl. Phys. (1985)
10.1143/JJAP.24.L513 / Jpn. J. Appl. Phys. (1985)
10.1143/JJAP.24.411 / Jpn. J. Appl. Phys. (1985)
{'key': '2024020515300348400_r7'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 10:49 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 12:01 p.m.)
Issued	39 years, 5 months ago (March 24, 1986)
Published	39 years, 5 months ago (March 24, 1986)
Published Print	39 years, 5 months ago (March 24, 1986)

Funders 0

None

BibTeX

@article{Ishiwara_1986, title={Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates}, volume={48}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96717}, DOI={10.1063/1.96717}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ishiwara, Hiroshi and Tamba, Akihiro and Furukawa, Seijiro}, year={1986}, month=mar, pages={773–775} }

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