DOI: 10.1063/1.96608. Effect of the silicon doping concentration on the recombination kinetics of <i>D</i> <i>X</i> centers in Al0.35Ga0.65As

Effect of the silicon doping concentration on the recombination kinetics of D X centers in Al0.35Ga0.65As

10.1063/1.96608

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The recombination (electron capture) kinetics of the ionized DX center in AlxGa1−xAs have been measured as a function of temperature and silicon doping concentration. It is shown that for x≂0.35, the silicon concentration dependence of the recombination kinetics is dominated by effects of the electron distribution in the conduction band, and is insensitive to changes in the trap characteristics. In a model kinetic calculation consistent with the data the trap is found to capture through a level 0.202 eV from the bottom of the conduction band with a width of 0.045 eV, independent of DX center concentration.

Bibliography

Caswell, N. S., Mooney, P. M., Wright, S. L., & Solomon, P. M. (1986). Effect of the silicon doping concentration on the recombination kinetics of D X centers in Al0.35Ga0.65As. Applied Physics Letters, 48(16), 1093â1095.

Authors 4

N. S. Caswell (first)
P. M. Mooney (additional)
S. L. Wright (additional)
P. M. Solomon (additional)

References 9 Referenced 48

10.1103/PhysRevB.19.1015 / Phys. Rev. B (1979)
{'key': '2024020515342608700_r2', 'first-page': '623', 'volume': '74', 'year': '1985', 'journal-title': 'Inst. Phys. Conf. Ser. No.'} / Inst. Phys. Conf. Ser. No. (1985)
10.1088/0022-3719/17/34/004 / J. Phys. C (1984)
10.1143/JJAP.24.L143 / Jpn. J. Appl. Phys. (1985)
10.1103/PhysRevB.30.4481 / Phys. Rev. B (1984)
10.1557/PROC-46-403 / Mater. Res. Soc. Symp. Proc. (1985)
{'key': '2024020515342608700_r7'}
{'key': '2024020515342608700_r8'}
10.1016/0038-1098(79)90995-5 / Solid State Commun. (1979)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 10:53 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:44 a.m.)
Issued	39 years, 4 months ago (April 21, 1986)
Published	39 years, 4 months ago (April 21, 1986)
Published Print	39 years, 4 months ago (April 21, 1986)

Funders 0

None

BibTeX

@article{Caswell_1986, title={Effect of the silicon doping concentration on the recombination kinetics of D X centers in Al0.35Ga0.65As}, volume={48}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96608}, DOI={10.1063/1.96608}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Caswell, N. S. and Mooney, P. M. and Wright, S. L. and Solomon, P. M.}, year={1986}, month=apr, pages={1093–1095} }

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