DOI: 10.1063/1.96549. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

10.1063/1.96549

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN buffer layers, GaN thin films with optically flat surfaces free from cracks are successfully grown. The narrowest x-ray rocking curve from the (0006) plane is 2.70′ and from the (202̄4) plane is 1.86′. Photoluminescence spectra show strong near band edge emission. The growth condition dependence of crystalline quality is also studied.

Bibliography

Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986). Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Applied Physics Letters, 48(5), 353â355.

Authors 4

H. Amano (first)
N. Sawaki (additional)
I. Akasaki (additional)
Y. Toyoda (additional)

References 12 Referenced 1,876

10.1063/1.1652845 / Appl. Phys. Lett. (1969)
{'key': '2024020515251587800_r2', 'first-page': '479', 'volume': '63', 'year': '1981', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1981)
10.1063/1.1663432 / Appl. Phys. (1974)
10.1063/1.93952 / Appl. Phys. Lett. (1983)
10.1016/S0022-3697(73)80090-3 / J. Phys. Chem. Solids (1973)
10.1063/1.93953 / Appl. Phys. Lett. (1983)
10.1016/0022-0248(84)90412-3 / J. Cryst. Growth (1984)
10.1002/crat.19770121016 / Krist. Tech. (1977)
{'key': '2024020515251587800_r9', 'first-page': '83', 'volume': '28', 'year': '1982', 'journal-title': 'Nat. Tech. Rep.'} / Nat. Tech. Rep. (1982)
10.1149/1.2404088 / J. Electrochem. Soc. (1972)
10.1149/1.2131366 / J. Electrochem. Soc. (1978)
10.1143/JJAP.19.2395 / Jpn. J. Appl. Phys. (1980)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 10:42 a.m.)
Indexed	4 hours, 13 minutes ago (Aug. 23, 2025, 9:30 p.m.)
Issued	39 years, 6 months ago (Feb. 3, 1986)
Published	39 years, 6 months ago (Feb. 3, 1986)
Published Print	39 years, 6 months ago (Feb. 3, 1986)

Funders 0

None

BibTeX

@article{Amano_1986, title={Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer}, volume={48}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96549}, DOI={10.1063/1.96549}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Amano, H. and Sawaki, N. and Akasaki, I. and Toyoda, Y.}, year={1986}, month=feb, pages={353–355} }

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