DOI: 10.1063/1.96406. Schottky barrier diodes using thick, well-characterized boron phosphide wafers

Schottky barrier diodes using thick, well-characterized boron phosphide wafers

10.1063/1.96406

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Thick, single crystalline boron phosphide (BP) wafers (∼200–300 μm) grown by the chemical vapor deposition technique were characterized by the measurements of lattice constants by the Bond method and electrical properties by the Van der Pauw method. Two types of Schottky barrier diodes, i.e., n-BP-Sb and p-BP-Au, were fabricated. The n-BP-Sb diode has the highest reverse voltage of 5 V and a barrier height of 1.4 eV, while those of the p-BP-Au diode are 1 V and 1.2 eV. These results suggest that device application of BP is promising.

Bibliography

Kumashiro, Y., & Okada, Y. (1985). Schottky barrier diodes using thick, well-characterized boron phosphide wafers. Applied Physics Letters, 47(1), 64â66.

Authors 2

Y. Kumashiro (first)
Y. Okada (additional)

References 11 Referenced 32

{'key': '2024020514554532800_r1', 'first-page': '634', 'volume': '125', 'year': '1978', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1978)
10.1002/pssa.2210590148 / Phys. Status Solidi A (1980)
10.1143/JJAP.15.2021 / Jpn. J. Appl. Phys. (1976)
10.1016/0038-1101(66)90126-2 / Solid State Electron. (1966)
{'key': '2024020514554532800_r5', 'first-page': '346', 'volume': '13&14', 'year': '1972', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1972)
{'key': '2024020514554532800_r6', 'first-page': '411', 'volume': '13', 'year': '1974', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1974)
{'key': '2024020514554532800_r7'}
{'key': '2024020514554532800_r8', 'first-page': '193', 'volume': '25', 'year': '1974', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1974)
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{'key': '2024020514554532800_r11'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:56 a.m.)
Indexed	1 day, 7 hours ago (Aug. 23, 2025, 12:58 a.m.)
Issued	40 years, 1 month ago (July 1, 1985)
Published	40 years, 1 month ago (July 1, 1985)
Published Print	40 years, 1 month ago (July 1, 1985)

Funders 0

None

BibTeX

@article{Kumashiro_1985, title={Schottky barrier diodes using thick, well-characterized boron phosphide wafers}, volume={47}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96406}, DOI={10.1063/1.96406}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kumashiro, Y. and Okada, Y.}, year={1985}, month=jul, pages={64–66} }

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