DOI: 10.1063/1.96402. Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices

Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices

10.1063/1.96402

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The density of radiation-induced interface traps in a metal-oxide-semiconductor (MOS) device has been found to depend on the electrode material used to form the gate. For a given oxide process, this dependence correlates well with the gate-induced interfacial stress distribution in the MOS system. The gate-induced bond strain gradient model that we proposed previously may be readily used to explain the results.

Bibliography

Zekeriya, V., & Ma, T.-P. (1985). Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices. Applied Physics Letters, 47(1), 54â56.

Authors 2

Viktor Zekeriya (first)
T-P. Ma (additional)

References 18 Referenced 24

{'key': '2024020514563863900_r1', 'first-page': '1651', 'volume': 'NS-27', 'year': '1980', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1980)
{'key': '2024020514563863900_r2'}
{'key': '2024020514563863900_r3', 'first-page': '57', 'volume': '14', 'year': '1972', 'journal-title': 'Thin Solid Films'} / Thin Solid Films (1972)
{'key': '2024020514563863900_r4', 'first-page': '1563', 'volume': 'NS-23', 'year': '1976', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1976)
{'key': '2024020514563863900_r5', 'first-page': '162', 'volume': 'NS-29', 'year': '1982', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1982)
{'key': '2024020514563863900_r6', 'first-page': '1640', 'volume': 'NS-27', 'year': '1980', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1980)
{'key': '2024020514563863900_r7', 'first-page': '195', 'volume': 'NS-16', 'year': '1969', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1969)
10.1063/1.88366 / Appl. Phys. Lett. (1975)
10.1063/1.88308 / Appl. Phys. Lett. (1975)
10.1063/1.1657309 / J. Appl. Phys. (1969)
10.1063/1.93774 / Appl. Phys. Lett. (1983)
10.1063/1.334094 / J. Appl. Phys. (1984)
10.1063/1.95200 / Appl. Phys. Lett. (1984)
10.1063/1.94135 / Appl. Phys. Lett. (1983)
{'key': '2024020514563863900_r15', 'first-page': '1261', 'volume': 'NS-31', 'year': '1984', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1984)
10.1063/1.95805 / Appl. Phys. Lett. (1985)
{'key': '2024020514563863900_r17'}
{'key': '2024020514563863900_r18'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:02 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:56 a.m.)
Indexed	4 months, 3 weeks ago (April 3, 2025, 7:43 a.m.)
Issued	40 years, 1 month ago (July 1, 1985)
Published	40 years, 1 month ago (July 1, 1985)
Published Print	40 years, 1 month ago (July 1, 1985)

Funders 0

None

BibTeX

@article{Zekeriya_1985, title={Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices}, volume={47}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96402}, DOI={10.1063/1.96402}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zekeriya, Viktor and Ma, T-P.}, year={1985}, month=jul, pages={54–56} }

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