Crossref
journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract
We present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be changed and potentially controlled by an ultrathin metal intralayer. Synchrotron-radiation photoemission experiments demonstrate that 0.5–2-Å-thick Al intralayers increase the valence-band discontinuity of CdS-Ge and CdS-Si heterojunctions by 0.15 eV on the average.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:46 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 10:27 a.m.) |
Indexed | 1 year, 1 month ago (July 5, 2024, 7:38 p.m.) |
Issued | 39 years, 9 months ago (Nov. 15, 1985) |
Published | 39 years, 9 months ago (Nov. 15, 1985) |
Published Print | 39 years, 9 months ago (Nov. 15, 1985) |