Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be changed and potentially controlled by an ultrathin metal intralayer. Synchrotron-radiation photoemission experiments demonstrate that 0.5–2-Å-thick Al intralayers increase the valence-band discontinuity of CdS-Ge and CdS-Si heterojunctions by 0.15 eV on the average.

Bibliography

Niles, D. W., Margaritondo, G., Perfetti, P., Quaresima, C., & Capozi, M. (1985). Heterojunction band discontinuity control by ultrathin intralayers. Applied Physics Letters, 47(10), 1092–1094.

Authors 5
  1. D. W. Niles (first)
  2. G. Margaritondo (additional)
  3. P. Perfetti (additional)
  4. C. Quaresima (additional)
  5. M. Capozi (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 10:27 a.m.)
Indexed 1 year, 1 month ago (July 5, 2024, 7:38 p.m.)
Issued 39 years, 9 months ago (Nov. 15, 1985)
Published 39 years, 9 months ago (Nov. 15, 1985)
Published Print 39 years, 9 months ago (Nov. 15, 1985)
Funders 0

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