Abstract
A novel three-terminal resonant-tunneling structure is proposed in which the double potential barrier is defined within the plane of a two-dimensional (2-D) electron gas. The resonant tunneling of 2-D electrons into a 1-D ‘‘quantum wire’’ is controlled not only by a source-to-drain voltage but also by a gate potential. In addition to the negative differential resistance found in conventional resonant-tunneling diodes, our device offers a negative transconductance. This feature is potentially useful for low-power logic circuits.
References
12
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:46 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 10:36 a.m.) |
Indexed | 1 year, 1 month ago (July 12, 2024, 4:24 a.m.) |
Issued | 39 years, 8 months ago (Dec. 15, 1985) |
Published | 39 years, 8 months ago (Dec. 15, 1985) |
Published Print | 39 years, 8 months ago (Dec. 15, 1985) |
@article{Luryi_1985, title={Resonant tunneling of two-dimensional electrons through a quantum wire: A negative transconductance device}, volume={47}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96276}, DOI={10.1063/1.96276}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Luryi, Serge and Capasso, Federico}, year={1985}, month=dec, pages={1347–1349} }