DOI: 10.1063/1.96251. Wide gap II-VI superlattices of ZnSe-Zn1−<i>x</i>Mn<i>x</i>Se

Wide gap II-VI superlattices of ZnSe-Zn1−xMnxSe

10.1063/1.96251

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In this letter we report the first growth of wide gap II-VI semiconductor superlattices of Zn1−xMnxSe (0&lt;x&lt;0.51). The superlattices are grown by molecular beam epitaxy. Bulk crystals of Zn1−xMnxSe (0&lt;x&lt;0.57) grown in the past have shown a predominance of the zincblende phase only up to x=0.3; above this mole fraction a predominance of the hexagonal phase is observed. For the superlattices and epilayers reported here, only the zincblende phase (100) is present over the entire composition range investigated. Transmission electron microscopy shows clear evidence of the superlattice structure. Photoluminescence measurements of ZnSe epilayers show a dominant free-exciton feature while the Zn1−xMnxSe epilayers exhibit two distinct photoluminescence peaks. The relative intensities of band-to-band transitions and Mn-related transitions are somewhat comparable for the epilayers. However, the superlattices having ZnSe in the wells show virtually no Mn-related emission regardless of the mole fraction of Mn in the barrier layers indicating significant carrier confinement. The intensity of the band-to-band emission is two orders of magnitude more intense for the superlattices than the ZnSe epilayer at 6.5 K. The superlattices show a red shift of the photoluminescence peak which can be explained in terms of shifts in the band gaps due to the presence of strains.

Bibliography

Kolodziejski, L. A., Gunshor, R. L., Bonsett, T. C., Venkatasubramanian, R., Datta, S., Bylsma, R. B., Becker, W. M., & Otsuka, N. (1985). Wide gap II-VI superlattices of ZnSe-Zn1âxMnxSe. Applied Physics Letters, 47(2), 169â171.

Authors 8

L. A. Kolodziejski (first)
R. L. Gunshor (additional)
T. C. Bonsett (additional)
R. Venkatasubramanian (additional)
S. Datta (additional)
R. B. Bylsma (additional)
W. M. Becker (additional)
N. Otsuka (additional)

References 10 Referenced 98

10.1063/1.93644 / Appl. Phys. Lett. (1982)
10.1063/1.95223 / Appl. Phys. Lett. (1984)
10.1063/1.94981 / Appl. Phys. Lett. (1984)
{'key': '2024020514583305500_r4'}
{'key': '2024020514583305500_r5'}
10.1063/1.94890 / Appl. Phys. Lett. (1984)
{'key': '2024020514583305500_r7'}
10.1016/0038-1098(83)90130-8 / Solid State Commun. (1983)
{'key': '2024020514583305500_r9'}
10.1116/1.582772 / J. Vac. Sci. Technol. B (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:58 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:42 a.m.)
Issued	40 years, 1 month ago (July 15, 1985)
Published	40 years, 1 month ago (July 15, 1985)
Published Print	40 years, 1 month ago (July 15, 1985)

Funders 0

None

BibTeX

@article{Kolodziejski_1985, title={Wide gap II-VI superlattices of ZnSe-Zn1‚àíxMnxSe}, volume={47}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96251}, DOI={10.1063/1.96251}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kolodziejski, L. A. and Gunshor, R. L. and Bonsett, T. C. and Venkatasubramanian, R. and Datta, S. and Bylsma, R. B. and Becker, W. M. and Otsuka, N.}, year={1985}, month=jul, pages={169‚Äì171} }

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