Abstract
A negative photoconductivity is observed due to the two-dimensional (2D) holes at GaAs/Al0.5Ga0.5As heterojunctions under illumination by a red light-emitting diode below ∼6 K. The photoconductivity follows a nonexponential decay after the illumination is turned off. Quantum transport measurements are made to demonstrate explicitly that the photoconductivity is due to a decrease in the density and mobility of the 2D holes, and a model is proposed to explain the phenomenon.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:46 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 10:17 a.m.) |
Indexed | 2 days, 18 hours ago (Sept. 2, 2025, 6:35 a.m.) |
Issued | 39 years, 11 months ago (Sept. 15, 1985) |
Published | 39 years, 11 months ago (Sept. 15, 1985) |
Published Print | 39 years, 11 months ago (Sept. 15, 1985) |
@article{Chou_1985, title={Negative photoconductivity of two-dimensional holes in GaAs/AlGaAs heterojunctions}, volume={47}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.96088}, DOI={10.1063/1.96088}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chou, M. J. and Tsui, D. C. and Weimann, G.}, year={1985}, month=sep, pages={609–611} }