DOI: 10.1063/1.95916. Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures

Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures

10.1063/1.95916

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Mobilities and sheet carrier densities of single interface, modulation-doped AlGaAs-GaAs heterostructures depend on the structure and molecular beam epitaxial growth parameters. Variation of the thickness of the undoped spacer between 20 and 360 Å gave electron densities in the range 1012–2×1011 cm−2 in two-dimensional electron gases. Thick spacers resulted in high 4.2-K mobilities of 1.2×106 cm2/Vs in dark and 1.8×106 cm2/Vs under illumination with corresponding channel densities of 2.3×1011 cm−2 and 3.9×1011 cm−2, respectively. Two-dimensional hole gases had mobilities of 83 000 cm2/Vs and hole concentrations of 2.7×1011 cm−2 at 4.2 K.

Bibliography

Weimann, G., & Schlapp, W. (1985). Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures. Applied Physics Letters, 46(4), 411â413.

Authors 2

G. Weimann (first)
W. Schlapp (additional)

References 8 Referenced 52

10.1016/0039-6028(84)90298-X / Surf. Sci. (1984)
10.1063/1.92088 / Appl. Phys. Lett. (1980)
10.1063/1.92604 / Appl. Phys. Lett. (1981)
10.1063/1.91754 / Appl. Phys. Lett. (1980)
10.1063/1.94891 / Appl. Phys. Lett. (1984)
{'key': '2024020514414413100_r6'}
{'key': '2024020514414413100_r7'}
10.1049/el:19840424 / Electron. Lett. (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:03 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:41 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 10:10 a.m.)
Issued	40 years, 6 months ago (Feb. 15, 1985)
Published	40 years, 6 months ago (Feb. 15, 1985)
Published Print	40 years, 6 months ago (Feb. 15, 1985)

Funders 0

None

BibTeX

@article{Weimann_1985, title={Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures}, volume={46}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95916}, DOI={10.1063/1.95916}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Weimann, G. and Schlapp, W.}, year={1985}, month=feb, pages={411–413} }

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