DOI: 10.1063/1.95865. High resolution electron microscope study of epitaxial CdTe-GaAs interfaces

High resolution electron microscope study of epitaxial CdTe-GaAs interfaces

10.1063/1.95865

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

CdTe films have been grown on (100) GaAs substrates with two different epitaxial relations: (111)CdTe∥(100)GaAs and (100)CdTe∥(100)GaAs. High resolution electron microscope observation of these two types of interfaces was carried out in order to investigate the role of the substrate surface microstructure in determining which type of epitaxy occurs. The interface of the former type shows a direct contact between the CdTe and GaAs crystals, while the interface of the latter type has a very thin layer (∼10 Å in thickness), which is most likely an oxide, between the two crystals. These observations suggest that the GaAs substrate preheating cycle prior to CdTe film growth is crucial in determining which type of epitaxy occurs in this system.

Bibliography

Otsuka, N., Kolodziejski, L. A., Gunshor, R. L., Datta, S., Bicknell, R. N., & Schetzina, J. F. (1985). High resolution electron microscope study of epitaxial CdTe-GaAs interfaces. Applied Physics Letters, 46(9), 860â862.

Authors 6

N. Otsuka (first)
L. A. Kolodziejski (additional)
R. L. Gunshor (additional)
S. Datta (additional)
R. N. Bicknell (additional)
J. F. Schetzina (additional)

References 16 Referenced 115

10.1063/1.92616 / Appl. Phys. Lett. (1981)
{'key': '2024020514503329400_r2', 'first-page': '8232', 'volume': '53', 'year': '1982', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1982)
10.1063/1.93644 / Appl. Phys. Lett. (1982)
10.1116/1.571955 / J. Vac. Sci. Technol. A (1983)
10.1063/1.93903 / Appl. Phys. Lett. (1983)
10.1007/BF02650868 / J. Electron. Mater. (1983)
10.1063/1.94683 / Appl. Phys. Lett. (1984)
10.1063/1.94736 / Appl. Phys. Lett. (1984)
10.1063/1.94890 / Appl. Phys. Lett. (1984)
10.1063/1.95223 / Appl. Phys. Lett. (1984)
{'key': '2024020514503329400_r11'}
10.1063/1.94389 / Appl. Phys. Lett. (1983)
{'key': '2024020514503329400_r13'}
10.1063/1.323081 / J. Appl. Phys. (1976)
10.1063/1.94927 / Appl. Phys. Lett. (1984)
10.1063/1.333084 / J. Appl. Phys. (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:50 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:39 a.m.)
Issued	40 years, 3 months ago (May 1, 1985)
Published	40 years, 3 months ago (May 1, 1985)
Published Print	40 years, 3 months ago (May 1, 1985)

Funders 0

None

BibTeX

@article{Otsuka_1985, title={High resolution electron microscope study of epitaxial CdTe-GaAs interfaces}, volume={46}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95865}, DOI={10.1063/1.95865}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Otsuka, N. and Kolodziejski, L. A. and Gunshor, R. L. and Datta, S. and Bicknell, R. N. and Schetzina, J. F.}, year={1985}, month=may, pages={860–862} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T16:39:10Z",
    "timestamp": 1707151150192
  },
  "reference-count": 16,
  "publisher": "AIP Publishing",
  "issue": "9",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1985,
        5,
        1
      ]
    ]
  },
  "abstract": "<jats:p>CdTe films have been grown on (100) GaAs substrates with two different epitaxial relations: (111)CdTe\u2225(100)GaAs and (100)CdTe\u2225(100)GaAs. High resolution electron microscope observation of these two types of interfaces was carried out in order to investigate the role of the substrate surface microstructure in determining which type of epitaxy occurs. The interface of the former type shows a direct contact between the CdTe and GaAs crystals, while the interface of the latter type has a very thin layer (\u223c10 \u00c5 in thickness), which is most likely an oxide, between the two crystals. These observations suggest that the GaAs substrate preheating cycle prior to CdTe film growth is crucial in determining which type of epitaxy occurs in this system.</jats:p>",
  "DOI": "10.1063/1.95865",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:46:28Z",
    "timestamp": 1027687588000
  },
  "page": "860-862",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 115,
  "title": "High resolution electron microscope study of epitaxial CdTe-GaAs interfaces",
  "prefix": "10.1063",
  "volume": "46",
  "author": [
    {
      "given": "N.",
      "family": "Otsuka",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Purdue University, West Lafayette, Indiana 47907"
        }
      ]
    },
    {
      "given": "L. A.",
      "family": "Kolodziejski",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Purdue University, West Lafayette, Indiana 47907"
        }
      ]
    },
    {
      "given": "R. L.",
      "family": "Gunshor",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Purdue University, West Lafayette, Indiana 47907"
        }
      ]
    },
    {
      "given": "S.",
      "family": "Datta",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Purdue University, West Lafayette, Indiana 47907"
        }
      ]
    },
    {
      "given": "R. N.",
      "family": "Bicknell",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202"
        }
      ]
    },
    {
      "given": "J. F.",
      "family": "Schetzina",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020514503329400_r1",
      "doi-asserted-by": "crossref",
      "first-page": "954",
      "DOI": "10.1063/1.92616",
      "volume": "39",
      "year": "1981",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r2",
      "first-page": "8232",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020514503329400_r3",
      "doi-asserted-by": "crossref",
      "first-page": "713",
      "DOI": "10.1063/1.93644",
      "volume": "41",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r4",
      "doi-asserted-by": "crossref",
      "first-page": "562",
      "DOI": "10.1116/1.571955",
      "volume": "1",
      "year": "1983",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020514503329400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "247",
      "DOI": "10.1063/1.93903",
      "volume": "42",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r6",
      "doi-asserted-by": "crossref",
      "first-page": "619",
      "DOI": "10.1007/BF02650868",
      "volume": "12",
      "year": "1983",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020514503329400_r7",
      "doi-asserted-by": "crossref",
      "first-page": "237",
      "DOI": "10.1063/1.94683",
      "volume": "44",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r8",
      "doi-asserted-by": "crossref",
      "first-page": "313",
      "DOI": "10.1063/1.94736",
      "volume": "44",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r9",
      "doi-asserted-by": "crossref",
      "first-page": "799",
      "DOI": "10.1063/1.94890",
      "volume": "44",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r10",
      "doi-asserted-by": "crossref",
      "first-page": "440",
      "DOI": "10.1063/1.95223",
      "volume": "45",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r11"
    },
    {
      "key": "2024020514503329400_r12",
      "doi-asserted-by": "crossref",
      "first-page": "462",
      "DOI": "10.1063/1.94389",
      "volume": "43",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r13"
    },
    {
      "key": "2024020514503329400_r14",
      "doi-asserted-by": "crossref",
      "first-page": "2841",
      "DOI": "10.1063/1.323081",
      "volume": "47",
      "year": "1976",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020514503329400_r15",
      "doi-asserted-by": "crossref",
      "first-page": "898",
      "DOI": "10.1063/1.94927",
      "volume": "44",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514503329400_r16",
      "doi-asserted-by": "crossref",
      "first-page": "378",
      "DOI": "10.1063/1.333084",
      "volume": "55",
      "year": "1984",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/46/9/860/18453922/860_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/46/9/860/18453922/860_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T14:50:47Z",
    "timestamp": 1707144647000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/46/9/860/50426/High-resolution-electron-microscope-study-of"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1985,
        5,
        1
      ]
    ]
  },
  "references-count": 16,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          1985,
          5,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.95865",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1985,
        5,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1985,
        5,
        1
      ]
    ]
  }
}