DOI: 10.1063/1.95856. Influence of light-induced defects in hydrogenated amorphous silicon on charge carrier dynamics

Influence of light-induced defects in hydrogenated amorphous silicon on charge carrier dynamics

10.1063/1.95856

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Charge carrier decay processes in hydrogenated amorphous silicon after extended illumination are studied by the time-resolved microwave conductivity method. It is shown that creation of metastable defects depends on illumination time. Two different defects can be distinguished: one which decreases the charge carrier lifetime in the bulk, whereas the other one increases the subband gap absorption at the surface.

Bibliography

Werner, A., & Kunst, M. (1985). Influence of light-induced defects in hydrogenated amorphous silicon on charge carrier dynamics. Applied Physics Letters, 46(1), 69â70.

Authors 2

A. Werner (first)
M. Kunst (additional)

References 7 Referenced 10

10.1063/1.328084 / J. Appl. Phys. (1980)
{'key': '2024020514392832100_r2', 'first-page': '456', 'volume': '38', 'year': '1980', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1980)
{'key': '2024020514392832100_r3', 'first-page': '897', 'volume': '117&118', 'year': '1983', 'journal-title': 'Physica'} / Physica (1983)
{'key': '2024020514392832100_r4', 'first-page': '397', 'volume': '59&60', 'year': '1983', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1983)
10.1016/0301-0104(82)85148-3 / Chem. Phys. (1982)
{'key': '2024020514392832100_r6'}
{'key': '2024020514392832100_r7'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:39 a.m.)
Indexed	2 months, 1 week ago (June 25, 2025, 5:06 p.m.)
Issued	40 years, 8 months ago (Jan. 1, 1985)
Published	40 years, 8 months ago (Jan. 1, 1985)
Published Print	40 years, 8 months ago (Jan. 1, 1985)

Funders 0

None

BibTeX

@article{Werner_1985, title={Influence of light-induced defects in hydrogenated amorphous silicon on charge carrier dynamics}, volume={46}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95856}, DOI={10.1063/1.95856}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Werner, A. and Kunst, M.}, year={1985}, month=jan, pages={69–70} }

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