DOI: 10.1063/1.95663. Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice

Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice

10.1063/1.95663

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

GaAsP-InGaAs strained-layer superlattices grown lattice matched to GaAs have been used to reduce the density of threading dislocations originating from the GaAs substrate. GaAs epitaxial layers grown on the GaAsP-InGaAs superlattice buffer layers showed a dislocation density lower by at least an order of magnitude than that obtained from epitaxial layers grown directly on GaAs substrates. Transmission electron microscopy showed that dislocations originating from the GaAs substrate do not penetrate the GaAsP-InGaAs superlattice layers.

Bibliography

Tischler, M. A., Katsuyama, T., El-Masry, N. A., & Bedair, S. M. (1985). Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice. Applied Physics Letters, 46(3), 294â296.

Authors 4

M. A. Tischler (first)
T. Katsuyama (additional)
N. A. El-Masry (additional)
S. M. Bedair (additional)

References 21 Referenced 50

10.1143/JJAP.22.L54 / Jpn. J. Appl. Phys. (1983)
10.1103/PhysRevLett.33.1082 / Phys. Rev. Lett. (1974)
{'key': '2024020514432055400_r3', 'first-page': '5433', 'volume': '50', 'year': '1979', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1979)
10.1143/JJAP.22.L270 / Jpn. J. Appl. Phys. (1983)
{'key': '2024020514432055400_r5'}
10.1143/JJAP.21.L542 / Jpn. J. Appl. Phys. (1982)
{'key': '2024020514432055400_r7', 'first-page': '1057', 'volume': 'ED-31', 'year': '1984', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1984)
{'key': '2024020514432055400_r8', 'first-page': '800', 'volume': 'ED-31', 'year': '1984', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1984)
{'key': '2024020514432055400_r9', 'first-page': '1062', 'volume': 'ED-31', 'year': '1984', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1984)
10.1063/1.94526 / Appl. Phys. Lett. (1983)
{'key': '2024020514432055400_r11', 'first-page': '1051', 'volume': 'ED-31', 'year': '1984', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1984)
{'key': '2024020514432055400_r12', 'first-page': '12', 'volume': '27', 'year': '1984', 'journal-title': 'Solid State Technol.'} / Solid State Technol. (1984)
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10.1116/1.569409 / J. Vac. Sci. Technol. (1977)
{'key': '2024020514432055400_r16', 'first-page': '45', 'volume': 'EDL-5', 'year': '1984', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1984)
10.1016/0022-0248(84)90453-6 / J. Cryst. Growth (1984)
{'key': '2024020514432055400_r18'}
{'key': '2024020514432055400_r19'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 9:43 a.m.)
Indexed	1 month, 2 weeks ago (July 20, 2025, 12:16 a.m.)
Issued	40 years, 7 months ago (Feb. 1, 1985)
Published	40 years, 7 months ago (Feb. 1, 1985)
Published Print	40 years, 7 months ago (Feb. 1, 1985)

Funders 0

None

BibTeX

@article{Tischler_1985, title={Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice}, volume={46}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95663}, DOI={10.1063/1.95663}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tischler, M. A. and Katsuyama, T. and El-Masry, N. A. and Bedair, S. M.}, year={1985}, month=feb, pages={294–296} }

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