DOI: 10.1063/1.95637. Determination of the conduction-band discontinuities of GaAs/Al<i>x</i>Ga1−<i>x</i>As interfaces by capacitance-voltage measurements

Determination of the conduction-band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance-voltage measurements

10.1063/1.95637

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The relation between the conduction-band discontinuity ΔEc and the Al composition x of refined GaAs/AsxGa1−xAs (x&lt;0.42) heterointerfaces was determined by means of capacitance-voltage measurements. The resulting relation, ΔEc=0.67ΔEg, is different from Dingle’s rule. The interface charge density σ of a series of the samples was also investigated in relation to the reliability of the determination of ΔEc. It was found that σ less than 1×1011/cm2 is required to determine ΔEc with the precision of ±10 meV.

Bibliography

Okumura, H., Misawa, S., Yoshida, S., & Gonda, S. (1985). Determination of the conduction-band discontinuities of GaAs/AlxGa1âxAs interfaces by capacitance-voltage measurements. Applied Physics Letters, 46(4), 377â379.

Authors 4

H. Okumura (first)
S. Misawa (additional)
S. Yoshida (additional)
S. Gonda (additional)

References 19 Referenced 101

10.1103/PhysRevLett.44.1620 / Phys. Rev. Lett. (1980)
{'key': '2024020514420556400_r2', 'first-page': '163', 'volume': '43', 'year': '1982', 'journal-title': 'Solid State Commun.'} / Solid State Commun. (1982)
10.1116/1.571979 / J. Vac. Sci. Technol. A (1983)
10.1116/1.582550 / J. Vac. Sci. Technol. B (1983)
10.1116/1.571980 / J. Vac. Sci. Technol. A (1983)
{'key': '2024020514420556400_r6', 'first-page': '684', 'volume': '1', 'year': '1983', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1983)
10.1016/0039-6028(83)90555-1 / Surf. Sci. (1983)
10.1103/PhysRevLett.33.827 / Phys. Rev. Lett. (1974)
10.1002/pssa.2210720125 / Phys. Status Solidi A (1982)
10.1116/1.582575 / J. Vac. Sci. Technol. B (1983)
10.1103/PhysRevB.29.7085 / Phys. Rev. B (1984)
10.1063/1.91467 / Appl. Phys. Lett. (1980)
10.1063/1.94149 / Appl. Phys. Lett. (1983)
{'key': '2024020514420556400_r14'}
10.1143/JJAP.23.L521 / Jpn. J. Appl. Phys. (1984)
{'key': '2024020514420556400_r16'}
10.1063/1.332930 / J. Appl. Phys. (1984)
10.1149/1.2132910 / J. Electrochem. Soc. (1976)
10.1116/1.582891 / J. Vac. Sci. Technol. B (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 9:42 a.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 7:32 p.m.)
Issued	40 years, 6 months ago (Feb. 15, 1985)
Published	40 years, 6 months ago (Feb. 15, 1985)
Published Print	40 years, 6 months ago (Feb. 15, 1985)

Funders 0

None

BibTeX

@article{Okumura_1985, title={Determination of the conduction-band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance-voltage measurements}, volume={46}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95637}, DOI={10.1063/1.95637}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Okumura, H. and Misawa, S. and Yoshida, S. and Gonda, S.}, year={1985}, month=feb, pages={377–379} }

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