DOI: 10.1063/1.95631. Study of the kinetics and mechanism of the thermal nitridation of SiO2

Study of the kinetics and mechanism of the thermal nitridation of SiO2

10.1063/1.95631

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

X-ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO2 films. The XPS data show that the maximum nitrogen concentration near the (SiOxNy)/Si interface is initially at the interface, but moves 20–25 Å away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen-rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO2. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.

Bibliography

Vasquez, R. P., Madhukar, A., Grunthaner, F. J., & Naiman, M. L. (1985). Study of the kinetics and mechanism of the thermal nitridation of SiO2. Applied Physics Letters, 46(4), 361â363.

Authors 4

R. P. Vasquez (first)
A. Madhukar (additional)
F. J. Grunthaner (additional)
M. L. Naiman (additional)

References 20 Referenced 28

10.1149/1.2130065 / J. Electrochem. Soc. (1980)
{'key': '2024020514441947400_r2', 'first-page': '562', 'volume': '80', 'year': '1980', 'journal-title': 'IEEE IEDM'} / IEEE IEDM (1980)
10.1063/1.93698 / Appl. Phys. Lett. (1982)
10.1149/1.2124388 / J. Electrochem. Soc. (1982)
10.1063/1.330046 / J. Appl. Phys. (1982)
10.1116/1.582544 / J. Vac. Sci. Technol. B (1983)
10.1149/1.2119904 / J. Electrochem. Soc. (1983)
10.1063/1.94614 / Appl. Phys. Lett. (1984)
10.1063/1.94553 / Appl. Phys. Lett. (1984)
10.1149/1.2115648 / J. Electrochem. Soc. (1984)
{'key': '2024020514441947400_r11'}
10.1116/1.570218 / J. Vac. Sci. Technol. (1979)
10.1116/1.570588 / J. Vac. Sci. Technol. (1980)
10.1016/0039-6028(80)90561-0 / Surf. Sci. (1980)
{'key': '2024020514441947400_r15', 'first-page': '969', 'volume': '264', 'year': '1967', 'journal-title': 'C. R. Acad. Sci. Paris Ser. C'} / C. R. Acad. Sci. Paris Ser. C (1967)
10.1149/1.2123617 / J. Electrochem. Soc. (1982)
10.1103/PhysRevLett.43.1683 / Phys. Rev. Lett. (1979)
10.1103/PhysRevB.21.1576 / Phys. Rev. B (1980)
{'key': '2024020514441947400_r19', 'first-page': '1462', 'volume': 'NS-29', 'year': '1982', 'journal-title': 'IEEE Trans. Nucl. Sci.'} / IEEE Trans. Nucl. Sci. (1982)
10.1116/1.571034 / J. Vac. Sci. Technol. (1981)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:46 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:44 a.m.)
Indexed	1 year, 1 month ago (July 8, 2024, 1:51 a.m.)
Issued	40 years, 6 months ago (Feb. 15, 1985)
Published	40 years, 6 months ago (Feb. 15, 1985)
Published Print	40 years, 6 months ago (Feb. 15, 1985)

Funders 0

None

BibTeX

@article{Vasquez_1985, title={Study of the kinetics and mechanism of the thermal nitridation of SiO2}, volume={46}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95631}, DOI={10.1063/1.95631}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vasquez, R. P. and Madhukar, A. and Grunthaner, F. J. and Naiman, M. L.}, year={1985}, month=feb, pages={361–363} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        7,
        8
      ]
    ],
    "date-time": "2024-07-08T05:51:18Z",
    "timestamp": 1720417878571
  },
  "reference-count": 20,
  "publisher": "AIP Publishing",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1985,
        2,
        15
      ]
    ]
  },
  "abstract": "<jats:p>X-ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO2 films. The XPS data show that the maximum nitrogen concentration near the (SiOxNy)/Si interface is initially at the interface, but moves 20\u201325 \u00c5 away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen-rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO2. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.</jats:p>",
  "DOI": "10.1063/1.95631",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:46:28Z",
    "timestamp": 1027687588000
  },
  "page": "361-363",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 28,
  "title": "Study of the kinetics and mechanism of the thermal nitridation of SiO2",
  "prefix": "10.1063",
  "volume": "46",
  "author": [
    {
      "given": "R. P.",
      "family": "Vasquez",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Materials Science, University of Southern California, Los Angeles, California 90089-0241"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Madhukar",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials Science, University of Southern California, Los Angeles, California 90089-0241"
        }
      ]
    },
    {
      "given": "F. J.",
      "family": "Grunthaner",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109"
        }
      ]
    },
    {
      "given": "M. L.",
      "family": "Naiman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020514441947400_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2053",
      "DOI": "10.1149/1.2130065",
      "volume": "127",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020514441947400_r2",
      "first-page": "562",
      "volume": "80",
      "year": "1980",
      "journal-title": "IEEE IEDM"
    },
    {
      "key": "2024020514441947400_r3",
      "doi-asserted-by": "crossref",
      "first-page": "816",
      "DOI": "10.1063/1.93698",
      "volume": "41",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514441947400_r4",
      "doi-asserted-by": "crossref",
      "first-page": "2102",
      "DOI": "10.1149/1.2124388",
      "volume": "129",
      "year": "1982",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020514441947400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "6996",
      "DOI": "10.1063/1.330046",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020514441947400_r6",
      "doi-asserted-by": "crossref",
      "first-page": "67",
      "DOI": "10.1116/1.582544",
      "volume": "1",
      "year": "1983",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020514441947400_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1139",
      "DOI": "10.1149/1.2119904",
      "volume": "130",
      "year": "1983",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020514441947400_r8",
      "doi-asserted-by": "crossref",
      "first-page": "969",
      "DOI": "10.1063/1.94614",
      "volume": "44",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514441947400_r9",
      "doi-asserted-by": "crossref",
      "first-page": "62",
      "DOI": "10.1063/1.94553",
      "volume": "44",
      "year": "1984",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020514441947400_r10",
      "doi-asserted-by": "crossref",
      "first-page": "637",
      "DOI": "10.1149/1.2115648",
      "volume": "131",
      "year": "1984",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020514441947400_r11"
    },
    {
      "key": "2024020514441947400_r12",
      "doi-asserted-by": "crossref",
      "first-page": "1443",
      "DOI": "10.1116/1.570218",
      "volume": "16",
      "year": "1979",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "2024020514441947400_r13",
      "doi-asserted-by": "crossref",
      "first-page": "1045",
      "DOI": "10.1116/1.570588",
      "volume": "17",
      "year": "1980",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "2024020514441947400_r14",
      "doi-asserted-by": "crossref",
      "first-page": "681",
      "DOI": "10.1016/0039-6028(80)90561-0",
      "volume": "99",
      "year": "1980",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2024020514441947400_r15",
      "first-page": "969",
      "volume": "264",
      "year": "1967",
      "journal-title": "C. R. Acad. Sci. Paris Ser. C"
    },
    {
      "key": "2024020514441947400_r16",
      "doi-asserted-by": "crossref",
      "first-page": "2594",
      "DOI": "10.1149/1.2123617",
      "volume": "129",
      "year": "1982",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020514441947400_r17",
      "doi-asserted-by": "crossref",
      "first-page": "1683",
      "DOI": "10.1103/PhysRevLett.43.1683",
      "volume": "43",
      "year": "1979",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020514441947400_r18",
      "doi-asserted-by": "crossref",
      "first-page": "1576",
      "DOI": "10.1103/PhysRevB.21.1576",
      "volume": "21",
      "year": "1980",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020514441947400_r19",
      "first-page": "1462",
      "volume": "NS-29",
      "year": "1982",
      "journal-title": "IEEE Trans. Nucl. Sci."
    },
    {
      "key": "2024020514441947400_r20",
      "doi-asserted-by": "crossref",
      "first-page": "437",
      "DOI": "10.1116/1.571034",
      "volume": "19",
      "year": "1981",
      "journal-title": "J. Vac. Sci. Technol."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/46/4/361/18453488/361_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/46/4/361/18453488/361_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T14:44:38Z",
    "timestamp": 1707144278000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/46/4/361/50593/Study-of-the-kinetics-and-mechanism-of-the-thermal"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1985,
        2,
        15
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          1985,
          2,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.95631",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1985,
        2,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1985,
        2,
        15
      ]
    ]
  }
}