DOI: 10.1063/1.95349. Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures

Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures

10.1063/1.95349

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A persistent photoconductivity is observed in the transport of the high mobility two-dimensional electron gas in In0.53Ga0.47 As/InP heterostructures. Low field Hall measurements from 300 to 4.2 K and the quantized Hall effect in the high field limit are studied with radiation from visible and infrared light-emitting diodes. Our results demonstrate conclusively that the effect is due to photogeneration of electron-hole pairs in the heterostructure and trapping of holes in the In0.53Ga0.47 As.

Bibliography

Wei, H. P., Tsui, D. C., & Razeghi, M. (1984). Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures. Applied Physics Letters, 45(6), 666â668.

Authors 3

H. P. Wei (first)
D. C. Tsui (additional)
M. Razeghi (additional)

References 12 Referenced 38

{'key': '2024020514273463600_r1', 'first-page': '825', 'volume': '43', 'year': '982', 'journal-title': 'Solid State Commun.'} / Solid State Commun. (982)
10.1116/1.582499 / J. Vac. Sci. Technol. B (1983)
{'key': '2024020514273463600_r2', 'first-page': '262', 'volume': '41', 'year': '1983', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1983)
10.1063/1.330537 / J. Appl. Phys. (1982)
10.1063/1.92604 / Appl. Phys. Lett. (1981)
10.1063/1.95360 / Appl. Phys. Lett. (1984)
10.1103/PhysRevLett.39.635 / Phys. Rev. Lett. (1977)
10.1103/PhysRevB.19.1015 / Phys. Rev. (1979)
10.1007/BF02676799 / J. Electron. Mater. (1983)
{'key': '2024020514273463600_r9'}
10.1063/1.92408 / Appl. Phys. Lett. (1981)
10.1103/PhysRevB.27.6549 / Phys. Rev. B (1983)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:54 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:28 a.m.)
Indexed	2 months, 2 weeks ago (June 20, 2025, 2:24 p.m.)
Issued	40 years, 11 months ago (Sept. 15, 1984)
Published	40 years, 11 months ago (Sept. 15, 1984)
Published Print	40 years, 11 months ago (Sept. 15, 1984)

Funders 0

None

BibTeX

@article{Wei_1984, title={Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures}, volume={45}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95349}, DOI={10.1063/1.95349}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wei, H. P. and Tsui, D. C. and Razeghi, M.}, year={1984}, month=sep, pages={666–668} }

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