DOI: 10.1063/1.95342. Growth of Cd1−xMnxTe films with 0&lt;x&lt;0.9 by atomic layer epitaxy

Growth of Cd1−xMnxTe films with 0&lt;x&lt;0.9 by atomic layer epitaxy

10.1063/1.95342

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Thin Cd1−xMnxTe semiconductor films with x ranging from 0 to 0.9 have been grown on CdTe (111) substrates using the atomic layer epitaxy method. The films grow epitaxially at all concentrations and show no manganese interdiffusion. The films are characterized by low-energy electron diffraction, Auger electron spectroscopy and angle-resolved UV photoemission.

Bibliography

Pessa, M., & JylhÃ¤, O. (1984). Growth of Cd1âxMnxTe films with 0<x<0.9 by atomic layer epitaxy. Applied Physics Letters, 45(6), 646â648.

Authors 2

M. Pessa (first)
O. Jylhä (additional)

References 30 Referenced 66

{'key': '2024020514234869800_r1'}
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:54 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:24 a.m.)
Indexed	1 month, 3 weeks ago (July 4, 2025, 8:45 a.m.)
Issued	40 years, 11 months ago (Sept. 15, 1984)
Published	40 years, 11 months ago (Sept. 15, 1984)
Published Print	40 years, 11 months ago (Sept. 15, 1984)

Funders 0

None

BibTeX

@article{Pessa_1984, title={Growth of Cd1вҲ’xMnxTe films with 0&lt;x&lt;0.9 by atomic layer epitaxy}, volume={45}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95342}, DOI={10.1063/1.95342}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pessa, M. and JylhГӨ, O.}, year={1984}, month=sep, pages={646вҖ“648} }

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