Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Silicon surfaces which had been exposed to a CF4 /H2 plasma have been characterized by x-ray photoelectron spectroscopy, ellipsometry, He ion channeling, and H profiling techniques. Plasma exposure leads to the deposition of a thin (∼30 Å thick) C,F-polymeric layer. Hydrogen and/or damage (displaced Si atoms) can be detected in the near-surface region up to a depth in excess of 400 Å from the Si surface.

Bibliography

Oehrlein, G. S., Tromp, R. M., Lee, Y. H., & Petrillo, E. J. (1984). Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etching. Applied Physics Letters, 45(4), 420–422.

Authors 4
  1. G. S. Oehrlein (first)
  2. R. M. Tromp (additional)
  3. Y. H. Lee (additional)
  4. E. J. Petrillo (additional)
References 13 Referenced 92
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Dates
Type When
Created 22 years, 6 months ago (Feb. 13, 2003, 4:54 p.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 9:22 a.m.)
Indexed 2 months, 1 week ago (June 25, 2025, 5:06 p.m.)
Issued 41 years ago (Aug. 15, 1984)
Published 41 years ago (Aug. 15, 1984)
Published Print 41 years ago (Aug. 15, 1984)
Funders 0

None

@article{Oehrlein_1984, title={Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etching}, volume={45}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95243}, DOI={10.1063/1.95243}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Oehrlein, G. S. and Tromp, R. M. and Lee, Y. H. and Petrillo, E. J.}, year={1984}, month=aug, pages={420–422} }