Abstract
Silicon surfaces which had been exposed to a CF4 /H2 plasma have been characterized by x-ray photoelectron spectroscopy, ellipsometry, He ion channeling, and H profiling techniques. Plasma exposure leads to the deposition of a thin (∼30 Å thick) C,F-polymeric layer. Hydrogen and/or damage (displaced Si atoms) can be detected in the near-surface region up to a depth in excess of 400 Å from the Si surface.
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 13, 2003, 4:54 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 9:22 a.m.) |
Indexed | 2 months, 1 week ago (June 25, 2025, 5:06 p.m.) |
Issued | 41 years ago (Aug. 15, 1984) |
Published | 41 years ago (Aug. 15, 1984) |
Published Print | 41 years ago (Aug. 15, 1984) |
@article{Oehrlein_1984, title={Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etching}, volume={45}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95243}, DOI={10.1063/1.95243}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Oehrlein, G. S. and Tromp, R. M. and Lee, Y. H. and Petrillo, E. J.}, year={1984}, month=aug, pages={420–422} }