DOI: 10.1063/1.95242. Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon

Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon

10.1063/1.95242

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The diffusion of ion-implanted phosphorus in silicon during rapid thermal annealing has been studied. Depending on the implant dose, we find two distinct kinds of diffusion behavior. For low dose (1×1014 cm−2) P+-implanted Si, a profile redistribution is observed which becomes observable at 900 °C for annealing times of 10 s, but which is temperature independent in the range 800–1150 °C. This initial redistribution is much more rapid than conventional diffusion coefficient data would predict. For high dose (2×1015 cm−2) P+ implanted and short time (10 s) annealed Si, the dopant profile broadening is strongly temperature dependent. The experimental profiles are in this case in agreement with concentration enhanced diffusion profiles.

Bibliography

Oehrlein, G. S., Cohen, S. A., & Sedgwick, T. O. (1984). Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon. Applied Physics Letters, 45(4), 417â419.

Authors 3

G. S. Oehrlein (first)
S. A. Cohen (additional)
T. O. Sedgwick (additional)

References 18 Referenced 50

10.1149/1.2119736 / J. Eletrochem. Soc. (1983)
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10.1063/1.94572 / Appl. Phys. Lett. (1984)
10.1063/1.94200 / Appl. Phys. Lett. (1983)
10.1063/1.331780 / J. Appl. Phys. (1983)
{'key': '2024020514224201400_r6', 'first-page': '353', 'volume': 'EDL-4', 'year': '1983', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1983)
{'key': '2024020514224201400_r7'}
{'key': '2024020514224201400_r8'}
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{'key': '2024020514224201400_r13'}
{'key': '2024020514224201400_r14'}
10.1063/1.1721810 / J. Appl. Phys. (1954)
10.1088/0034-4885/41/10/003 / Rep. Prog. Phys. (1978)
10.1063/1.1654200 / Appl. Phys. Lett. (1972)
10.1149/1.2133492 / J. Electrochem. Soc. (1977)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:54 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 9:22 a.m.)
Indexed	1 year, 6 months ago (March 7, 2024, 8:58 a.m.)
Issued	41 years ago (Aug. 15, 1984)
Published	41 years ago (Aug. 15, 1984)
Published Print	41 years ago (Aug. 15, 1984)

Funders 0

None

BibTeX

@article{Oehrlein_1984, title={Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon}, volume={45}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95242}, DOI={10.1063/1.95242}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Oehrlein, G. S. and Cohen, S. A. and Sedgwick, T. O.}, year={1984}, month=aug, pages={417–419} }

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