DOI: 10.1063/1.95076. Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of <i>p</i>+-GaAs-(Al,Ga)As-<i>p</i>−-GaAs capacitors

Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of p+-GaAs-(Al,Ga)As-p−-GaAs capacitors

10.1063/1.95076

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The valence-band discontinuity between GaAs and AlxGa1−xAs (0.3≪x≪1.0) was determined from measurements on p+-GaAs-(Al,Ga)As-p−-GaAs capacitors from current-voltage measurements as a function of temperature. It was found that thermionic emission dominated the conduction process in these structures for temperatures above 140 K and for low bias voltages. The barrier height was determined from the slope of ln(J/T2) vs l/T. From this, a valence-band discontinuity of 35% of the total direct band-gap (EgΓ) discontinuity, being independent of the mole fraction x, between GaAs and (Al,Ga)As was calculated. The corresponding value for the conduction-band discontinuity, 65%, is considerably lower than the commonly accepted value of 85%.

Bibliography

Arnold, D., Ketterson, A., Henderson, T., Klem, J., & MorkoÃ§, H. (1984). Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of p+-GaAs-(Al,Ga)As-pâ-GaAs capacitors. Applied Physics Letters, 45(11), 1237â1239.

Authors 5

D. Arnold (first)
A. Ketterson (additional)
T. Henderson (additional)
J. Klem (additional)
H. Morkoç (additional)

References 12 Referenced 62

10.1103/PhysRevLett.33.827 / Phys. Rev. Lett. (1974)
10.1063/1.91467 / Appl. Phys. Lett. (1980)
10.1063/1.327853 / J. Appl. Phys. (1980)
10.1063/1.92970 / Appl. Phys. Lett. (1982)
10.1103/PhysRevB.29.3740 / Phys. Rev. B (1984)
10.1103/PhysRevB.29.7085 / Phys. Rev. B (1984)
10.1063/1.94082 / Appl. Phys. Lett. (1983)
{'key': '2024020514335229400_r8'}
{'key': '2024020514335229400_r9'}
10.1016/0022-0248(82)90464-X / J. Cryst. Growth (1982)
10.1063/1.94564 / Appl. Phys. Lett. (1984)
10.1063/1.95339 / Appl. Phys. Lett. (1984)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:54 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:34 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:02 a.m.)
Issued	40 years, 8 months ago (Dec. 1, 1984)
Published	40 years, 8 months ago (Dec. 1, 1984)
Published Print	40 years, 8 months ago (Dec. 1, 1984)

Funders 0

None

BibTeX

@article{Arnold_1984, title={Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of p+-GaAs-(Al,Ga)As-p−-GaAs capacitors}, volume={45}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.95076}, DOI={10.1063/1.95076}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Arnold, D. and Ketterson, A. and Henderson, T. and Klem, J. and Morkoç, H.}, year={1984}, month=dec, pages={1237–1239} }

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