DOI: 10.1063/1.94673. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

10.1063/1.94673

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have grown GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy. The epitaxial growth was studied in situ by reflection high-energy electron diffraction. Low-temperature photoluminescence, Raman scattering, and scanning electron microscopy were used to characterize the epitaxial layers. It is shown for the first time that antiphase disorder could be suppressed. The doped AlGaAs grown directly on Si substrates exhibited PL efficiency similar to that of AlGaAs grown on GaAs substrates.

Bibliography

Wang, W. I. (1984). Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100). Applied Physics Letters, 44(12), 1149â1151.

Authors 1

W. I. Wang (first)

References 20 Referenced 207

10.1063/1.92976 / Appl. Phys. Lett. (1982)
{'key': '2024020514142198400_r2'}
10.1063/1.94235 / Appl. Phys. Lett. (1983)
10.1103/PhysRevB.18.4402 / Phys. Rev. B (1978)
10.1016/0022-0248(79)90053-8 / J. Cryst. Growth (1979)
10.1063/1.91643 / Appl. Phys. Lett. (1980)
10.1116/1.571123 / J. Vac. Sci. Technol. (1981)
10.1116/1.571755 / J. Vac. Sci. Technol. (1982)
{'key': '2024020514142198400_r9', 'first-page': '668', 'volume': '1', 'year': '1983', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1983)
10.1016/0039-6028(69)90062-4 / Surf. Sci. (1969)
10.1016/0039-6028(70)90153-6 / Surf. Sci. (1970)
10.1149/1.2134290 / J. Electrochem. Soc. (1975)
10.1143/JJAP.17.1043 / Japn. J. Appl. Phys. (1978)
10.1143/JJAP.21.L68 / Japn. J. Appl. Phys. (1982)
10.1016/0039-6028(64)90099-8 / Surf. Sci. (1964)
10.1016/0039-6028(80)90052-7 / Surf. Sci. (1980)
10.1116/1.570943 / J. Vac. Sci. Technol. (1981)
10.1016/0038-1098(82)90853-5 / Solid State Commun. (1982)
10.1063/1.91428 / Appl. Phys. Lett. (1980)
10.1063/1.1708117 / J. Appl. Phys. (1966)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:47 p.m.)
Deposited	1 year, 7 months ago (Feb. 5, 2024, 9:15 a.m.)
Indexed	1 week ago (Aug. 29, 2025, 5:42 a.m.)
Issued	41 years, 2 months ago (June 15, 1984)
Published	41 years, 2 months ago (June 15, 1984)
Published Print	41 years, 2 months ago (June 15, 1984)

Funders 0

None

BibTeX

@article{Wang_1984, title={Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)}, volume={44}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.94673}, DOI={10.1063/1.94673}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wang, W. I.}, year={1984}, month=jun, pages={1149–1151} }

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