DOI: 10.1063/1.94614. X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2

X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2

10.1063/1.94614

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

X-ray photoelectron spectroscopy has been used to study the composition of 100-Å thermally grown SiO2 films that have been thermally nitrided in ammonia. The SiOxNy/Si interface was studied both by chemical depth profiling of the oxynitride and by removal of the Si substrate with XeF2. It is found that N is distributed throughout the film, but with the concentration higher at the surface and in a region centered 25 Å from the film/substrate interface. The interface region itself is found to be oxygen-rich relative to the rest of the film. Possible models which can explain these results are discussed.

Bibliography

Vasquez, R. P., Hecht, M. H., Grunthaner, F. J., & Naiman, M. L. (1984). X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2. Applied Physics Letters, 44(10), 969â971.

Authors 4

R. P. Vasquez (first)
M. H. Hecht (additional)
F. J. Grunthaner (additional)
M. L. Naiman (additional)

References 23 Referenced 77

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10.1063/1.93698 / Appl. Phys. Lett. (1982)
{'key': '2024020514114611600_r6', 'first-page': '562', 'volume': '80', 'year': '1980', 'journal-title': 'IEEE IEDM'} / IEEE IEDM (1980)
{'key': '2024020514114611600_r7', 'first-page': '364C', 'volume': '128', 'year': '1981', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1981)
{'key': '2024020514114611600_r8'}
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{'key': '2024020514114611600_r11'}
10.1149/1.2119784 / J. Electrochem. Soc. (1983)
{'key': '2024020514114611600_r13'}
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10.1103/PhysRevB.21.1576 / Phys. Rev. B (1980)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:47 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:14 a.m.)
Indexed	4 months, 3 weeks ago (April 11, 2025, 1:10 a.m.)
Issued	41 years, 3 months ago (May 15, 1984)
Published	41 years, 3 months ago (May 15, 1984)
Published Print	41 years, 3 months ago (May 15, 1984)

Funders 0

None

BibTeX

@article{Vasquez_1984, title={X-ray photoelectron spectroscopy study of the chemical structure of thermally nitrided SiO2}, volume={44}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.94614}, DOI={10.1063/1.94614}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vasquez, R. P. and Hecht, M. H. and Grunthaner, F. J. and Naiman, M. L.}, year={1984}, month=may, pages={969–971} }

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