DOI: 10.1063/1.94553. Hydrogen content of thermally nitrided thin silicon dioxide films

Hydrogen content of thermally nitrided thin silicon dioxide films

10.1063/1.94553

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The hydrogen content of thermally nitrided silicon dioxide films (20–120 nm thick) was measured by means of the resonant nuclear reaction 1W(15N, αγ)12C. Although the hydrogen concentration in these films amounts to 1–3 at. %, no significant diffusion of hydrogen into the underlying silicon was observed. The hydrogen concentration is largest in the thinnest oxide films: nitridation at 1000 °C results in a higher hydrogen content than at 800 or 1160 °C. Although the exact shape of the in-depth hydrogen profile, especially in the surface and interface regions, could not be clearly resolved, the detected amount of incorporated hydrogen is such that only part of it can be bonded to nitrogen atoms. Hydrogen must also be incorporated as water, molecular hydrogen, Si–H or O–H groups, a fact which must play a role in the observed changes in electrical behaviour upon nitridation of thin silicon dioxide films.

Bibliography

Habraken, F. H. P. M., Evers, E. J., & Kuiper, A. E. T. (1984). Hydrogen content of thermally nitrided thin silicon dioxide films. Applied Physics Letters, 44(1), 62â64.

Authors 3

F. H. P. M. Habraken (first)
E. J. Evers (additional)
A. E. T. Kuiper (additional)

References 13 Referenced 34

{'key': '2024020513555215700_r1', 'first-page': '498', 'volume': 'ED-29', 'year': '1982', 'journal-title': 'IEEE Trans. Electron Device'} / IEEE Trans. Electron Device (1982)
10.1109/EDL.1983.25700 / IEEE Electron Devices Lett. (1983)
{'key': '2024020513555215700_r3', 'first-page': '562', 'volume': '80', 'year': '1980', 'journal-title': 'IEDM'} / IEDM (1980)
10.1063/1.330046 / J. Appl. Phys. (1982)
{'key': '2024020513555215700_r5'}
10.1149/1.2130065 / J. Electrochem. Soc. (1980)
10.1149/1.2131277 / J. Electrochem. Soc. (1978)
10.1063/1.88826 / Appl. Phys. Lett. (1976)
{'key': '2024020513555215700_r9'}
10.1063/1.325095 / J. Appl. Phys. (1978)
10.1016/0029-554X(81)90391-8 / Nucl. Instrum. Methods (1981)
{'key': '2024020513555215700_r12'}
10.1149/1.2123752 / J. Electrochm. Soc. (1982)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:47 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:59 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:01 a.m.)
Issued	41 years, 8 months ago (Jan. 1, 1984)
Published	41 years, 8 months ago (Jan. 1, 1984)
Published Print	41 years, 8 months ago (Jan. 1, 1984)

Funders 0

None

BibTeX

@article{Habraken_1984, title={Hydrogen content of thermally nitrided thin silicon dioxide films}, volume={44}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.94553}, DOI={10.1063/1.94553}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Habraken, F. H. P. M. and Evers, E. J. and Kuiper, A. E. T.}, year={1984}, month=jan, pages={62–64} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T16:01:26Z",
    "timestamp": 1707148886872
  },
  "reference-count": 13,
  "publisher": "AIP Publishing",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1984,
        1,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The hydrogen content of thermally nitrided silicon dioxide films (20\u2013120 nm thick) was measured by means of the resonant nuclear reaction 1W(15N, \u03b1\u03b3)12C. Although the hydrogen concentration in these films amounts to 1\u20133 at.\u2009%, no significant diffusion of hydrogen into the underlying silicon was observed. The hydrogen concentration is largest in the thinnest oxide films: nitridation at 1000\u2009\u00b0C results in a higher hydrogen content than at 800 or 1160\u2009\u00b0C. Although the exact shape of the in-depth hydrogen profile, especially in the surface and interface regions, could not be clearly resolved, the detected amount of incorporated hydrogen is such that only part of it can be bonded to nitrogen atoms. Hydrogen must also be incorporated as water, molecular hydrogen, Si\u2013H or O\u2013H groups, a fact which must play a role in the observed changes in electrical behaviour upon nitridation of thin silicon dioxide films.</jats:p>",
  "DOI": "10.1063/1.94553",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        13
      ]
    ],
    "date-time": "2003-02-13T21:47:05Z",
    "timestamp": 1045172825000
  },
  "page": "62-64",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 34,
  "title": "Hydrogen content of thermally nitrided thin silicon dioxide films",
  "prefix": "10.1063",
  "volume": "44",
  "author": [
    {
      "given": "F. H. P. M.",
      "family": "Habraken",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Technical Physics, State University of Utrecht, P. O. Box 80.000, 3508 TA Utrecht, The Netherlands"
        }
      ]
    },
    {
      "given": "E. J.",
      "family": "Evers",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "R.J. v.d. Graafflaboratory, State University of Utrecht, P. O. Box 80.000, 3508 TA Utrecht, The Netherlands"
        }
      ]
    },
    {
      "given": "A. E. T.",
      "family": "Kuiper",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020513555215700_r1",
      "first-page": "498",
      "volume": "ED-29",
      "year": "1982",
      "journal-title": "IEEE Trans. Electron Device"
    },
    {
      "key": "2024020513555215700_r2",
      "doi-asserted-by": "crossref",
      "first-page": "191",
      "DOI": "10.1109/EDL.1983.25700",
      "volume": "4",
      "year": "1983",
      "journal-title": "IEEE Electron Devices Lett."
    },
    {
      "key": "2024020513555215700_r3",
      "first-page": "562",
      "volume": "80",
      "year": "1980",
      "journal-title": "IEDM"
    },
    {
      "key": "2024020513555215700_r4",
      "doi-asserted-by": "crossref",
      "first-page": "6996",
      "DOI": "10.1063/1.330046",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020513555215700_r5"
    },
    {
      "key": "2024020513555215700_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2053",
      "DOI": "10.1149/1.2130065",
      "volume": "127",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020513555215700_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1708",
      "DOI": "10.1149/1.2131277",
      "volume": "125",
      "year": "1978",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020513555215700_r8",
      "doi-asserted-by": "crossref",
      "first-page": "566",
      "DOI": "10.1063/1.88826",
      "volume": "28",
      "year": "1976",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020513555215700_r9"
    },
    {
      "key": "2024020513555215700_r10",
      "doi-asserted-by": "crossref",
      "first-page": "2473",
      "DOI": "10.1063/1.325095",
      "volume": "49",
      "year": "1978",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020513555215700_r11",
      "doi-asserted-by": "crossref",
      "first-page": "573",
      "DOI": "10.1016/0029-554X(81)90391-8",
      "volume": "187",
      "year": "1981",
      "journal-title": "Nucl. Instrum. Methods"
    },
    {
      "key": "2024020513555215700_r12"
    },
    {
      "key": "2024020513555215700_r13",
      "doi-asserted-by": "crossref",
      "first-page": "184",
      "DOI": "10.1149/1.2123752",
      "volume": "129",
      "year": "1982",
      "journal-title": "J. Electrochm. Soc."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/44/1/62/18450242/62_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/44/1/62/18450242/62_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T13:59:44Z",
    "timestamp": 1707141584000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/44/1/62/49960/Hydrogen-content-of-thermally-nitrided-thin"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1984,
        1,
        1
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          1984,
          1,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.94553",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1984,
        1,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1984,
        1,
        1
      ]
    ]
  }
}