DOI: 10.1063/1.94389. Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition

Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition

10.1063/1.94389

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The heteroepitaxial growth of (111) CdTe on (100) GaAs substrates has been obtained by laser assisted deposition at 350 °C. Films 5–14 μm thick were characterized by x-ray diffraction, UV reflectance measurement, and transmission electron microscopy. Results indicate good crystallinity with 105 cm−2 dislocation densities beyond a few microns from the CdTe/GaAs interface.

Bibliography

Cheung, J. T., Khoshnevisan, M., & Magee, T. (1983). Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition. Applied Physics Letters, 43(5), 462â464.

Authors 3

J. T. Cheung (first)
M. Khoshnevisan (additional)
T. Magee (additional)

References 8 Referenced 52

10.1063/1.93903 / Appl. Phys. Lett. (1983)
10.1116/1.571708 / J. Vac. Sci. Technol. (1982)
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10.1063/1.93495 / Appl. Phys. Lett. (1982)
10.1063/1.89538 / Appl. Phys. Lett. (1977)
10.1149/1.2408161 / J. Electrochem. Soc. (1971)
{'key': '2024020513441925900_r6', 'first-page': '4231', 'volume': '53', 'year': '1981', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1981)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:39 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:53 a.m.)
Indexed	3 months ago (May 27, 2025, 8:57 a.m.)
Issued	42 years ago (Sept. 1, 1983)
Published	42 years ago (Sept. 1, 1983)
Published Print	42 years ago (Sept. 1, 1983)

Funders 0

None

BibTeX

@article{Cheung_1983, title={Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition}, volume={43}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.94389}, DOI={10.1063/1.94389}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cheung, J. T. and Khoshnevisan, M. and Magee, T.}, year={1983}, month=sep, pages={462–464} }

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