DOI: 10.1063/1.94232. Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealing

Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealing

10.1063/1.94232

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The microstructure of Czochralski silicon annealed at high temperatures has been investigated using high resolution transmission electron microscopy. After prolonged heat treatments at temperatures close to 1200 °C, two types of microdefects are observed: (a) small polyhedral oxide precipitates, with typical diameters of about 15 nm and facets along crystalline planes of the silicon matrix, and (b) planar faults along {111} planes which have been directly identified as extrinsic stacking faults bounded by Frank-type dislocations.

Bibliography

Ponce, F. A., Yamashita, T., & Hahn, S. (1983). Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealing. Applied Physics Letters, 43(11), 1051â1053.

Authors 3

F. A. Ponce (first)
T. Yamashita (additional)
S. Hahn (additional)

References 12 Referenced 56

10.1103/PhysRev.101.1264 / Phys. Rev. (1956)
{'key': '2024020513522606600_r2'}
10.1080/14786437608223798 / Philos. Mag. (1976)
10.1063/1.323241 / J. Appl. Phys. (1976)
{'key': '2024020513522606600_r5', 'first-page': '213', 'volume': '26', 'year': '1979', 'journal-title': 'Phys. Status Solidi A'} / Phys. Status Solidi A (1979)
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{'key': '2024020513522606600_r7'}
{'key': '2024020513522606600_r8'}
{'key': '2024020513522606600_r9'}
10.1016/0022-0248(82)90474-2 / J. Cryst. Growth (1982)
10.1016/0022-0248(81)90518-2 / J. Cryst. Growth (1981)
{'key': '2024020513522606600_r12'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:39 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:57 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 5:27 p.m.)
Issued	41 years, 8 months ago (Dec. 1, 1983)
Published	41 years, 8 months ago (Dec. 1, 1983)
Published Print	41 years, 8 months ago (Dec. 1, 1983)

Funders 0

None

BibTeX

@article{Ponce_1983, title={Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealing}, volume={43}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.94232}, DOI={10.1063/1.94232}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ponce, F. A. and Yamashita, T. and Hahn, S.}, year={1983}, month=dec, pages={1051–1053} }

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