DOI: 10.1063/1.94187. Silicon self-interstitial supersaturation during phosphorus diffusion

Silicon self-interstitial supersaturation during phosphorus diffusion

10.1063/1.94187

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The effect of phosphorus introduction and diffusion on the diffusivities of boron, arsenic, and antimony in silicon was studied using arsenic and antimony buried layers in a boron-doped silicon substrate. It was found that the diffusivity of boron and arsenic was enhanced, while that of antimony was retarded directly under the silicon surface exposed to phosphorus. Since antimony diffuses primarily via a vacancy mechanism while the other two elements via a combination of vacancy and interstitialcy mechanisms, these results suggest that phosphorus predeposition enhances the silicon self-interstitial concentration and reduces the concentration of vacancies.

Bibliography

Harris, R. M., & Antoniadis, D. A. (1983). Silicon self-interstitial supersaturation during phosphorus diffusion. Applied Physics Letters, 43(10), 937â939.

Authors 2

R. M. Harris (first)
D. A. Antoniadis (additional)

References 13 Referenced 48

10.1063/1.1663450 / J. Appl. Phys. (1974)
10.1063/1.324016 / J. Appl. Phys. (1977)
10.1149/1.2133492 / J. Electrochem. Soc. (1977)
10.1063/1.330067 / J. Appl. Phys. (1982)
10.1063/1.90853 / Appl. Phys. Lett. (1979)
10.1143/JJAP.20.739 / Jpn. J. Appl. Phys. (1981)
{'key': '2024020513530237100_r7', 'first-page': '412', 'volume': 'SC-14', 'year': '1979', 'journal-title': 'IEEE J. Solid State Circuit'} / IEEE J. Solid State Circuit (1979)
10.1149/1.2127563 / J. Electrochem. Soc. (1981)
10.1149/1.2124034 / J. Electrochem. Soc. (1982)
10.1063/1.1713945 / J. Appl. Phys. (1965)
10.1149/1.2131502 / J. Electrochem. Soc. (1978)
{'key': '2024020513530237100_r12'}
10.1063/1.1754480 / Appl. Phys. Lett. (1966)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:39 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:57 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:20 a.m.)
Issued	41 years, 9 months ago (Nov. 15, 1983)
Published	41 years, 9 months ago (Nov. 15, 1983)
Published Print	41 years, 9 months ago (Nov. 15, 1983)

Funders 0

None

BibTeX

@article{Harris_1983, title={Silicon self-interstitial supersaturation during phosphorus diffusion}, volume={43}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.94187}, DOI={10.1063/1.94187}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Harris, R. M. and Antoniadis, D. A.}, year={1983}, month=nov, pages={937–939} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T16:20:14Z",
    "timestamp": 1707150014202
  },
  "reference-count": 13,
  "publisher": "AIP Publishing",
  "issue": "10",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1983,
        11,
        15
      ]
    ]
  },
  "abstract": "<jats:p>The effect of phosphorus introduction and diffusion on the diffusivities of boron, arsenic, and antimony in silicon was studied using arsenic and antimony buried layers in a boron-doped silicon substrate. It was found that the diffusivity of boron and arsenic was enhanced, while that of antimony was retarded directly under the silicon surface exposed to phosphorus. Since antimony diffuses primarily via a vacancy mechanism while the other two elements via a combination of vacancy and interstitialcy mechanisms, these results suggest that phosphorus predeposition enhances the silicon self-interstitial concentration and reduces the concentration of vacancies.</jats:p>",
  "DOI": "10.1063/1.94187",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        13
      ]
    ],
    "date-time": "2003-02-13T21:39:58Z",
    "timestamp": 1045172398000
  },
  "page": "937-939",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 48,
  "title": "Silicon self-interstitial supersaturation during phosphorus diffusion",
  "prefix": "10.1063",
  "volume": "43",
  "author": [
    {
      "given": "R. M.",
      "family": "Harris",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139"
        }
      ]
    },
    {
      "given": "D. A.",
      "family": "Antoniadis",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020513530237100_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1498",
      "DOI": "10.1063/1.1663450",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020513530237100_r2",
      "doi-asserted-by": "crossref",
      "first-page": "2169",
      "DOI": "10.1063/1.324016",
      "volume": "48",
      "year": "1977",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020513530237100_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1107",
      "DOI": "10.1149/1.2133492",
      "volume": "124",
      "year": "1977",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020513530237100_r4",
      "doi-asserted-by": "crossref",
      "first-page": "6788",
      "DOI": "10.1063/1.330067",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020513530237100_r5",
      "doi-asserted-by": "crossref",
      "first-page": "530",
      "DOI": "10.1063/1.90853",
      "volume": "34",
      "year": "1979",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020513530237100_r6",
      "doi-asserted-by": "crossref",
      "first-page": "739",
      "DOI": "10.1143/JJAP.20.739",
      "volume": "20",
      "year": "1981",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020513530237100_r7",
      "first-page": "412",
      "volume": "SC-14",
      "year": "1979",
      "journal-title": "IEEE J. Solid State Circuit"
    },
    {
      "key": "2024020513530237100_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1121",
      "DOI": "10.1149/1.2127563",
      "volume": "128",
      "year": "1981",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020513530237100_r9",
      "doi-asserted-by": "crossref",
      "first-page": "1093",
      "DOI": "10.1149/1.2124034",
      "volume": "129",
      "year": "1982",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020513530237100_r10",
      "doi-asserted-by": "crossref",
      "first-page": "3770",
      "DOI": "10.1063/1.1713945",
      "volume": "36",
      "year": "1965",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020513530237100_r11",
      "doi-asserted-by": "crossref",
      "first-page": "576",
      "DOI": "10.1149/1.2131502",
      "volume": "125",
      "year": "1978",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020513530237100_r12"
    },
    {
      "key": "2024020513530237100_r13",
      "doi-asserted-by": "crossref",
      "first-page": "55",
      "DOI": "10.1063/1.1754480",
      "volume": "8",
      "year": "1966",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/43/10/937/18450017/937_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/43/10/937/18450017/937_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T13:57:49Z",
    "timestamp": 1707141469000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/43/10/937/48686/Silicon-self-interstitial-supersaturation-during"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1983,
        11,
        15
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "10",
    "published-print": {
      "date-parts": [
        [
          1983,
          11,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.94187",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1983,
        11,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1983,
        11,
        15
      ]
    ]
  }
}