Abstract
Amorphous silicon films have been prepared through mercury-photosensitized decomposition of monosilane gas at low temperatures. The films show optical and electrical properties comparable with those of the best films prepared by plasma chemical vapor deposition. The feasibility of amorphous solar cells with short-circuit current densities of more than 10 mA/cm2 has been demonstrated by fabrication of a Schottky barrier structure.
References
6
Referenced
56
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 13, 2003, 4:33 p.m.) |
Deposited | 1 year, 7 months ago (Feb. 5, 2024, 8:44 a.m.) |
Indexed | 1 year, 6 months ago (March 4, 2024, 12:22 p.m.) |
Issued | 42 years, 4 months ago (April 15, 1983) |
Published | 42 years, 4 months ago (April 15, 1983) |
Published Print | 42 years, 4 months ago (April 15, 1983) |
@article{Saitoh_1983, title={Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition}, volume={42}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.94069}, DOI={10.1063/1.94069}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Saitoh, T. and Muramatsu, S. and Shimada, T. and Migitaka, M.}, year={1983}, month=apr, pages={678–679} }