Abstract
Continuous (cw) 300-K laser operation of a 66-period lower energy GaAs-InxGa1−xAs (x∼0.2) strained superlattice (SL) and a higher energy 128-period GaAs1−xPx-GaAs (x∼0.25) strained SL is demonstrated. The strained SL’s are grown by organometallic vapor phase epitaxy (OMVPE) or metalorganic chemical vapor deposition (MOCVD) with higher gap quaternary confining layers and LB ∼75 Å barriers and Lz ∼75 Å quantum wells. These SL’s are unstable during high level excitation, failing in 2–20 min when operated cw at 300 K as photopumped lasers.
References
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 13, 2003, 4:33 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 8:40 a.m.) |
Indexed | 2 months ago (June 24, 2025, 7:05 a.m.) |
Issued | 42 years, 5 months ago (March 15, 1983) |
Published | 42 years, 5 months ago (March 15, 1983) |
Published Print | 42 years, 5 months ago (March 15, 1983) |
@article{Ludowise_1983, title={Continuous 300-K laser operation of strained superlattices}, volume={42}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93977}, DOI={10.1063/1.93977}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ludowise, M. J. and Dietze, W. T. and Lewis, C. R. and Camras, M. D. and Holonyak, N. and Fuller, B. K. and Nixon, M. A.}, year={1983}, month=mar, pages={487–489} }