DOI: 10.1063/1.93916. Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon

Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon

10.1063/1.93916

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Complete dielectric isolation of silicon regions 45 μm wide for microcircuits on silicon substrates is demonstrated by selective formation of oxidized porous silicon in heavily doped n-type regions. Anodic etching of n-type silicon in a hydrofluoric acid electrolyte exhibits a concentration-dependent voltage threshold. This voltage dependence allows the porous silicon formation process to be selective to heavily doped regions and self-stopping on lightly doped regions. Rapid oxidation of this porous silicon yields an oxide with dielectric properties approaching those of standard thermally grown silicon oxides. This process is an improvement over previously reported processes utilizing porous silicon in that wider regions (up to 300 μm) are dielectrically isolated by an oxide whose thickness is controllable and uniform so that stress and wafer warpage are minimized.

Bibliography

Holmstrom, R. P., & Chi, J. Y. (1983). Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon. Applied Physics Letters, 42(4), 386â388.

Authors 2

R. P. Holmstrom (first)
J. Y. Chi (additional)

References 14 Referenced 27

10.1016/0038-1101(81)90012-5 / Solid State Electron. (1981)
10.1143/JJAP.15.2279 / Jpn. J. Appl. Phys. (1976)
{'key': '2024020513243279700_r3', 'first-page': '1030', 'volume': '25', 'year': '1977', 'journal-title': 'Rev. Electron. Commun. Lab., Musashino Electron. Commun. Lab.'} / Rev. Electron. Commun. Lab., Musashino Electron. Commun. Lab. (1977)
{'issue': '18-1', 'key': '2024020513243279700_r4', 'first-page': '281', 'volume': '18', 'year': '1979', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1979)
{'key': '2024020513243279700_r5'}
10.1016/0039-6028(66)90071-9 / Surf. Sci. (1966)
10.1149/1.2404201 / J. Electrochem. Soc. (1972)
10.1149/1.2134015 / J. Electrochem. Soc. (1975)
{'key': '2024020513243279700_r9', 'first-page': '231', 'volume': '19', 'year': '1980', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1980)
{'key': '2024020513243279700_r10', 'first-page': '899', 'volume': '19', 'year': '1971', 'journal-title': 'Rev. Electron. Commun. Lab., Musashino Electron. Commun. Lab.'} / Rev. Electron. Commun. Lab., Musashino Electron. Commun. Lab. (1971)
10.1063/1.93125 / Appl. Phys. Lett. (1982)
10.1149/1.2129158 / J. Electrochem. Soc. (1979)
10.1149/1.2408076 / J. Electrochem. Soc. (1971)
10.1143/JJAP.15.1655 / Jpn. J. Appl. Phys. (1976)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:33 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:40 a.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:42 a.m.)
Issued	42 years, 6 months ago (Feb. 15, 1983)
Published	42 years, 6 months ago (Feb. 15, 1983)
Published Print	42 years, 6 months ago (Feb. 15, 1983)

Funders 0

None

BibTeX

@article{Holmstrom_1983, title={Complete dielectric isolation by highly selective and self-stopping formation of oxidized porous silicon}, volume={42}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93916}, DOI={10.1063/1.93916}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Holmstrom, R. P. and Chi, J. Y.}, year={1983}, month=feb, pages={386–388} }

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