DOI: 10.1063/1.93904. High quality polysilicon by amorphous low pressure chemical vapor deposition

High quality polysilicon by amorphous low pressure chemical vapor deposition

10.1063/1.93904

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Undoped and in situ phosphorus-doped low pressure chemical vapor deposited polysilicon films have been studied by various structural analysis and optical techniques as a function of deposition temperature. Polysilicon films of high quality can only be obtained by deposition in the amorphous phase and subsequent crystallization.

Bibliography

Harbeke, G., Krausbauer, L., Steigmeier, E. F., Widmer, A. E., Kappert, H. F., & Neugebauer, G. (1983). High quality polysilicon by amorphous low pressure chemical vapor deposition. Applied Physics Letters, 42(3), 249â251.

Authors 6

G. Harbeke (first)
L. Krausbauer (additional)
E. F. Steigmeier (additional)
A. E. Widmer (additional)
H. F. Kappert (additional)
G. Neugebauer (additional)

References 4 Referenced 89

10.1149/1.2129733 / J. Electrochem. Soc. (1980)
{'key': '2024020513235848800_r2'}
{'key': '2024020513235848800_r3'}
10.1103/PhysRevB.14.479 / Phys. Rev. B (1976)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 13, 2003, 4:33 p.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 8:39 a.m.)
Indexed	2 months, 2 weeks ago (June 17, 2025, 5:46 a.m.)
Issued	42 years, 7 months ago (Feb. 1, 1983)
Published	42 years, 7 months ago (Feb. 1, 1983)
Published Print	42 years, 7 months ago (Feb. 1, 1983)

Funders 0

None

BibTeX

@article{Harbeke_1983, title={High quality polysilicon by amorphous low pressure chemical vapor deposition}, volume={42}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.93904}, DOI={10.1063/1.93904}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Harbeke, G. and Krausbauer, L. and Steigmeier, E. F. and Widmer, A. E. and Kappert, H. F. and Neugebauer, G.}, year={1983}, month=feb, pages={249–251} }

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